M.A.A.Z. Md. Sahar

Effects of V/III ratio of InGaN quantum well at high growth temperature for near ultraviolet light emitting diodes

W. F. Lim, S. Ng, Mohd Anas Ahmad, 2021, Microelectronics International.

The dependence of indium incorporation on specified temperatures in growing InGaN/GaN heterostructure using MOCVD technique

Z. Hassan, S. Hamady, S. Ng, 2021 .

High quality aluminum nitride layer grown with a combined step of nitridation and trimethylaluminum preflow

Z. Hassan, N. Zainal, W. Maryam, 2021, Thin Solid Films.

Highly efficient near ultraviolet LEDs using InGaN/GaN/AlxGa1-xN/GaN multiple quantum wells at high temperature on sapphire substrate

Z. Hassan, S. Ng, M.A.A.Z. Md. Sahar, 2023, Materials Science in Semiconductor Processing.