Jingxi Sun

发表

The Nature and Impact of ZnO Buffer Layers on the Initial Stages of the Hydride Vapor Phase Epitaxy of GAN

Rong Zhang, T. Kuech, S. Gu, 2000 .

Chemical bonding and electronic properties of SeS2-treated GaAs(100)

Franz J. Himpsel, Thomas F. Kuech, Arthur B. Ellis, 1999 .

p-GaN surface treatments for metal contacts

F. J. Himpsel, Joan M. Redwing, Thomas F. Kuech, 2000 .

In Situ Surface Passivation of GaAs by Thermal Nitridation using Metalorganic Vapor Phase Epitaxy

F. Himpsel, T. Kuech, A. Ellis, 1999 .

In situ thermal nitridation of GaAs using metalorganic vapor phase epitaxy

T. Kuech, Jingxi Sun, L. Zhang, 1998 .

Role of interfacial compound formation associated with the use of ZnO buffers layers in the hydride vapor phase epitaxy of GaN

Rong Zhang, T. Kuech, S. Gu, 2000 .

n-GaN surface treatments for metal contacts studied via x-ray photoemission spectroscopy

F. Himpsel, T. Kuech, K. Rickert, 2002 .

Model development of GaN MOVPE growth chemistry for reactor design

T. Kuech, J. Redwing, Jingxi Sun, 2000 .

The Chemistry of GaN Growth

T. Kuech, J. Dumesic, J. Redwing, 2000 .

Transport and Reaction Behaviors of Precursors during Metalorganic Vapor Phase Epitaxy of Gallium Nitride

T. Kuech, J. Redwing, Jingxi Sun, 1999 .

LASERS, OPTICS, AND OPTOELECTRONICS 397 Near-field optical spectroscopy using an incoherent light source

L. J. Sargent, X. H. Zhang, R. Carminati, 2000 .