K. Kuldová

发表

Improvement of luminescence properties of GaN buffer layer for fast nitride scintillator structures

J. Oswald, A. Hospodková, T. Hubáček, 2017 .

Acceleration of the yellow band luminescence in GaN layers via Si and Ge doping

Z. Remeš, T. Hubáček, V. Jarý, 2022, Journal of Alloys and Compounds.

Properties of MOVPE InAs/GaAs quantum dots overgrown by InGaAs

J. Oswald, A. Hospodková, T. Mates, 2007 .

Improvement of luminescence properties of n-GaN using TEGa precursor

P. Hubík, M. Liedke, A. Wagner, 2020 .

Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs

J. Oswald, A. Hospodková, T. Hubáček, 2019, CrystEngComm.

Influence of Si doping of GaN layers surrounding InGaN quantum wells on structure photoluminescence properties

J. Oswald, A. Hospodková, T. Hubáček, 2019, Journal of Crystal Growth.

Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface

J. Oswald, P. Komninou, A. Hospodková, 2019, Journal of Crystal Growth.

Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties

A. Hospodková, T. Hubáček, J. Pangrác, 2019, Journal of Crystal Growth.

InGaN/GaN Structures: Effect of the Quantum Well Number on the Cathodoluminescent Properties

J. Oswald, A. Hospodková, T. Hubáček, 2018 .

Photoluminescence of InGaN/GaN MQW structures — technological aspects

J. Oswald, A. Hospodková, J. Pangrác, 2016, 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM).

Photoluminescence and magnetophotoluminescence of vertically stacked InAs/GaAs quantum dot structures

J. Oswald, J. Humlíček, A. Hospodková, 2007 .

Reaction Dynamics of a Photochromic Fluorescing Dithienylethene

S. Mukamel, S. Tretiak, H. Martin, 2001 .

PHOTOCHROMISM AND THERMOCHROMISM DRIVEN BY INTRAMOLECULAR PROTON TRANSFER IN DINITROBENZYLPYRIDINE COMPOUNDS

Y. Eichen, J. Lehn, Z. Pikramenou, 1996 .

Structural and Optical Properties of Luminescent Copper(I) Chloride Thin Films Deposited by Sequentially Pulsed Chemical Vapour Deposition

J. Macák, J. Přikryl, R. Zazpe, 2018, Coatings.

Photoluminescence and magnetophotoluminescence of circular andelliptical InAs/GaAs quantum dots

J. Oswald, J. Humlíček, A. Hospodková, 2006 .

Modification of the Surface Properties of AlxGa1–xN Substrates with Gradient Aluminum Composition Using Wet Chemical Treatments

O. Romanyuk, T. Paskova, A. Ivanisevic, 2019, ACS omega.

Relation between Ga Vacancies, Photoluminescence, and Growth Conditions of MOVPE-Prepared GaN Layers

M. Liedke, M. Butterling, A. Hospodková, 2022, Materials.

Magneto-photoluminescence study of electronic transitions in InAs/GaAs quantum dot layers

J. Oswald, J. Pangrác, T. Šimeček, 2002 .

Lasers with δ InAs layers in GaAs

P. Hazdra, J. Oswald, O. Petříček, 2002 .

Photo-switchable dithienylethenes: threshold of the photoreactivity

H. Trommsdorff, C. Kryschi, A. Bens, 2000 .

Ring-opening and -closure reaction dynamics of a photochromic dithienylethene derivative

H. Martin, H. Trommsdorff, C. Kryschi, 2002 .

Dihydroazulene/vinylheptafulvene photochromism: dynamics of the photochemical ring-opening reaction

J. Daub, M. Petermann, C. Kryschi, 2000 .

Photo-induced proton transfer in crystalline 2-(2′,4′-dinitro-benzyl)pyridine

O. Ziane, K. Kuldová, H. Trommsdorff, 1997 .

Long-lived photoinduced proton transfer processes

D. Haarer, Y. Eichen, J. Lehn, 1995 .

Luminescence redshift of thick InGaN/GaN heterostructures induced by the migration of surface adsorbed atoms

A. Hospodková, T. Hubáček, J. Pangrác, 2021, Journal of Crystal Growth.

Optical characterisation of MOVPE grown vertically correlated InAs/GaAs quantum dots

Pavel Hazdra, J. Oswald, Eduard Hulicius, 2007, Microelectron. J..

Elongation of InAs∕GaAs quantum dots from magnetophotoluminescence measurements

J. Oswald, J. Humlíček, A. Hospodková, 2006 .

Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures

P. Hazdra, J. Oswald, A. Hospodková, 2011 .

InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots

P. Hazdra, J. Oswald, A. Hospodková, 2010 .

Influence of capping layer thickness on electronic states in self assembled MOVPE grown InAs quantum dots in GaAs

P. Hazdra, J. Oswald, A. Hospodková, 2009 .

Lateral shape of InAs/GaAs quantum dots in vertically correlated structures

J. Oswald, J. Humlíček, A. Hospodková, 2007 .

Optical properties of epitaxially grown GaN:Ge thin films

Z. Remeš, A. Hospodková, T. Hubáček, 2022, Optical Materials: X.

The influence of Si on the properties of MOVPE grown GaN thin films: Optical and EPR study

A. Hospodková, T. Hubáček, V. Jarý, 2022, Radiation Measurements.

Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design

P. Hubík, A. Hospodková, T. Hubáček, 2021 .

Near and mid-infrared luminescence of new chalcohalide glasses doped with Pr3+ ions

J. Oswald, M. Frumar, B. Frumarova, 2008 .

The effect of In-flush on the optical anisotropy of InAs/GaAs quantum dots

Z. Wasilewski, J. Lapointe, M. Molas, 2012 .

A secret luminescence killer in deepest QWs of InGaN/GaN multiple quantum well structures

J. Oswald, M. Liedke, M. Butterling, 2020 .

Reaction and excited state relaxation dynamics of photochromic dithienylethene derivatives

Carola Kryschi, H. P. Trommsdorff, J. Ern, 2001 .

Luminescence and scintillation properties of the Si doped InGaN/GaN multiple quantum wells

T. Hubáček, V. Jarý, M. Buryi, 2022, Journal of Physics: Conference Series.

Depth profile of acceptor concentration in InGaN/GaN multiple quantum wells

J. Oswald, A. Hospodková, T. Hubáček, 2021 .

Electron mobility in GaN layers and HEMT structure optimized by MOVPE technological parameters

P. Hubík, A. Hospodková, T. Hubáček, 2022, Journal of Crystal Growth.

Type I–type II band alignment of a GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain-reducing layer composition

P. Hazdra, J. Oswald, A. Hospodková, 2013 .

Growth and properties of the MOVPE GaAs/InAs/GaAsSb quantum dot structures

J. Oswald, A. Hospodková, J. Pangrác, 2016 .

1.3 m emission from InAs/GaAs quantum dots

J. Oswald, J. Humlíček, A. Hospodková, 2006 .

Combined vertically correlated InAs and GaAsSb quantum dots separated by triangular GaAsSb barrier

J. Oswald, P. Komninou, A. Hospodková, 2013 .

Growth and properties of InAs/InxGa1−xAs/GaAs quantum dot structures

J. Oswald, A. Hospodková, J. Pangrác, 2008 .

Surface processes during growth of InAs/GaAs quantum dot structures monitored by reflectance anisotropy spectroscopy

J. Oswald, A. Hospodková, J. Pangrác, 2010 .

General overview of GaN devices and transport properties of AlGaN/GaN HEMT structures - impact of dislocation density and improved design

P. Hubík, A. Hospodková, T. Hubáček, 2021, NANOCON 2021 Conference Proeedings.

Devices based on InGaN/GaN multiple quantum well for scintillator and detector applications

Michael Heuken, Martin Nikl, Christophe Dujardin, 2016, Conference on Sensors, MEMS and Electro-Optic Systems.

Photoinduced Generation of Long-Lived Proton Transfer States: Photoinduced Proton Transfer from 2-(2‘,4‘-Dinitrobenzyl)pyridine to a Proton Cage, the [2.1.1] Cryptand

J. Lehn, H. Trommsdorff, K. Kuldová, 1997 .