S. Mathew

Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process

D. Kwong, N. Balasubramanian, D. Chan, 2003 .

Wet etching characteristics and surface morphology evaluation of MOCVD grown HfO2 film

M. Balasubramanian, N. Balasubramanian, B. Cho, 2004 .

Sub-100 nm MOSFET fabrication with low temperature resist trimming process

Ranganathan Nagarajan, N. Balasubramanian, L. K. Bera, 2004 .

Improvement of Electrical Properties of MOCVD HfO2 by Multistep Deposition

D. Kwong, N. Balasubramanian, B. Cho, 2003 .

Three-Layer laminated metal gate electrodes with tunable work functions for CMOS applications

N. Balasubramanian, S. Mathew, H.C. Wen, 2005, IEEE Electron Device Letters.