S. Hagedorn

Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope

M. Kneissl, M. Weyers, P. Parbrook, 2020, Semiconductor Science and Technology.

High-temperature annealing of AlN films grown on 4H–SiC

M. Weyers, M. Albrecht, F. Brunner, 2020 .

Correlation of sapphire off‐cut and reduction of defect density in MOVPE grown AlN

M. Kneissl, M. Weyers, A. Knauer, 2016 .

Advances in electron channelling contrast imaging and electron backscatter diffraction for imaging and analysis of structural defects in the scanning electron microscope

M. Kneissl, M. Weyers, P. Parbrook, 2020, IOP Conference Series: Materials Science and Engineering.

Scanning electron microscopy as a flexible technique for investigating the properties of UV-emitting nitride semiconductor thin films

M. Kneissl, M. Weyers, Tao Wang, 2019, Photonics Research.

Formation of voids and their role in the recovery of sputtered AlN during high-temperature annealing

S. Walde, M. Albrecht, S. Hagedorn, 2022, Journal of Applied Physics.

Correlation of sapphire off‐cut and reduction of defect density in MOVPE grown AlN [Phys. Status Solidi B 253, 809–813 (2016)]

M. Kneissl, M. Weyers, A. Knauer, 2016 .

Impact of Si doping on dislocation behavior in MOVPE-grown AlN on high-temperature annealed AlN buffer layers

M. Weyers, C. Netzel, S. Walde, 2022, Journal of Applied Physics.