H. Becker

发表

Comparison of shallow depth profiles of cobalt‐implanted Si wafers determined by total reflection x‐ray fluorescence analysis after repeated stratified etching and by rutherford backscattering spectrometry

A. Bohlen, R. Klockenkämper, L. Palmetshofer, 1999 .

Detection of hydrogen in hidden and spalled layers of turbine blade coatings

M. Dietrich, M. Schütze, D. Renusch, 2006 .

Ion beam synthesis of buried CoSi2-structures

A. Stephan, S. Kubsky, J. Meijer, 2002 .

Depth profiles of a shallow implanted layer in a Si wafer determined by different methods of thin-layer analysis ☆

H. Jenett, A. Bohlen, R. Klockenkämper, 2002 .

High-performance 6-inch EUV mask blanks produced under real production conditions by ion-beam sputter deposition

Hans Willy Becker, Torsten Feigl, Norbert Kaiser, 2002, Photomask Technology.

Ion beam sputter deposition of low-defect EUV mask blanks on 6-in. LTEM substrates in a real production environment

Hans Willy Becker, Torsten Feigl, Norbert Kaiser, 2002, SPIE Advanced Lithography.

High-purity Zirconium under Niobium ion implantation: possibility of a dynamic precipitation?

I. Samajdar, R. Tewari, D. Srivastava, 2015 .

Wear Measurements By Means Of Radioactive Ion Implantation

F. Terrasi, A. Stephan, Z. Fülöp, 2003 .

Stopping power of He ions in niobium from a comparison of RBS and X-ray reflectivity measurements

H. Zabel, C. Rolfs, H. Becker, 2002 .

Advanced femtosecond laser coatings raise damage thresholds

Detlev Ristau, Mark Gyamfi, Mathias Mende, 2015, SPIE Optical Systems Design.

Optical and Structural Properties of Amorphous Silicon Coatings deposited by Magnetron Sputtering

Nico Schmidt, S. Bruynooghe, M. Sundermann, 2010 .

Near-surface density of ion-implanted Si studied by Rutherford backscattering and total-reflection x-ray fluorescence

A. Bohlen, R. Klockenkämper, M. Becker, 2005 .

Investigation of polarization effects on new mask materials

Hans Willy Becker, Ute Buttgereit, Silvio Teuber, 2005, SPIE Advanced Lithography.