Woncheol Lee

发表

Deep Ultraviolet Luminescence Due to Extreme Confinement in Monolayer GaN/Al(Ga)N Nanowire and Planar Heterostructures.

Z. Mi, P. Bhattacharya, K. Sun, 2019, Nano letters.

Dielectric Engineering for Manipulating Exciton Transport in Semiconductor Monolayers.

Kenji Watanabe, T. Taniguchi, P. Deotare, 2021, Nano letters.

Perspectives and recent advances of two-dimensional III-nitrides: Material synthesis and emerging device applications

Z. Mi, P. Bhattacharya, P. Deotare, 2023, Applied Physics Letters.

Increasing the mobility and power-electronics figure of merit of AlGaN with atomically thin AlN/GaN digital-alloy superlattices

E. Kioupakis, N. Sanders, Woncheol Lee, 2022, Applied Physics Letters.

First-principles study of the self-interstitial diffusion mechanism in silicon

K. Chang, Woncheol Lee, Sun-Ghil Lee, 1998 .

Theoretical characterization and computational discovery of ultra-wide-band-gap semiconductors with predictive atomistic calculations

E. Kioupakis, S. Chae, Woncheol Lee, 2021, Journal of Materials Research.

Epitaxial hexagonal boron nitride with high quantum efficiency

Z. Mi, Yuanpeng Wu, E. Kioupakis, 2023, APL Materials.

Spin–orbit effects on the electronic and optical properties of lead iodide

P. Deotare, E. Kioupakis, Zidong Li, 2023, Applied Physics Letters.

Electron mobility of SnO2 from first principles

F. Giustino, E. Kioupakis, J. Leveillee, 2024, Applied Physics Letters.