R. Daineche

发表

Single mineral particle makes an electron point source

R. Morin, O. Grauby, E. Salançon, 2015 .

Three-dimensional composition mapping of NiSi phase distribution and Pt diffusion via grain boundaries in Ni2Si

D. Larson, M. Descoins, D. Mangelinck, 2010 .

Mn segregation in Ge/Mn5Ge3 heterostructures: The role of surface carbon adsorption

V. L. Thanh, L. Michez, M. Dau, 2011 .

Oxidation of Mg atomic monolayer onto silicon: A road toward MgOx/Mg2Si (11–1)/Si (100) heterostructure

M. Bocquet, S. Vizzini, C. Girardeaux, 2015 .

Surface-interface exploration of Mg deposited on Si(100) and oxidation effect on interfacial layer

S. Vizzini, C. Girardeaux, M. Bertoglio, 2015 .

A perfect wetting of Mg monolayer on Ag(111) under atomic scale investigation: First principles calculations, scanning tunneling microscopy, and Auger spectroscopy.

S. Vizzini, A. Hémeryck, G. Landa, 2016, The Journal of chemical physics.

Ultra-thin MgO(111)-polar sheets grown onto Ag(111)

S. Vizzini, C. Girardeaux, A. Hémeryck, 2016 .

Lattice and grain-boundary diffusion of As in Ni2Si

V. Carron, D. Mangelinck, C. Perrin, 2008 .

Correction of secondary ion mass spectrometry profiles for atom diffusion measurements

C. Grosjean, C. Girardeaux, A. Portavoce, 2009 .

Measurement of As diffusivity in Ni2Si thin films

V. Carron, D. Mangelinck, J. Lábár, 2010 .

Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour

D. Planson, L. Ottaviani, Stéphane Biondo, 2012 .

Stacking faults in intrinsic and N-doped 4H–SiC: true influence of the N-doping on their multiplicity

S. Juillaguet, G. Regula, T. Neisius, 2013 .

Source of low-energy coherent electron beams

R. Morin, A. Degiovanni, O. Grauby, 2006 .