J. Lorenzzi

发表

Reliability of Thin Thermally Grown SiO2 on 3C-SiC Studied by Scanning Probe Microscopy

G. Ferro, M. Weng, F. Giannazzo, 2010 .

Electrical Activity of Structural Defects in 3C-SiC

M. Weng, F. Giannazzo, F. Roccaforte, 2011 .

Nanoscale probing of dielectric breakdown at SiO2/3C-SiC interfaces

G. Ferro, M. Weng, F. Giannazzo, 2011 .

Incorporation of group III, IV and V elements in 3C–SiC(1 1 1) layers grown by the vapour–liquid–solid mechanism

G. Ferro, Jianwu Sun, E. Polychroniadis, 2010 .

Growth of silicon oxide nanowires at low temperature using tin hydroxide catalyst

G. Ferro, A. Brioude, A. Pillonnet, 2011 .

Improved Ni/3C-SiC contacts by effective contact area and conductivity increases at the nanoscale

G. Ferro, F. Giannazzo, F. Roccaforte, 2009 .

Study of the 3C-SiC nucleation from a liquid phase on a C face 6H-SiC substrate

D. Chaussende, G. Ferro, P. Miele, 2009 .

Combined effects of Ga, N, and Al codoping in solution grown 3C–SiC

G. Ferro, Jianwu Sun, S. Juillaguet, 2010 .

LTPL Investigation of N-Ga and N-Al Donor-Acceptor Pair Spectra in 3C-SiC Layers Grown by VLS on 6H-SiC Substrates

G. Ferro, Jianwu Sun, S. Juillaguet, 2010 .

Study of the Lateral Growth by VLS Mechanism Using Al-Based Melts on Patterned SiС Substrate

G. Ferro, D. Tournier, M. Lazar, 2012 .

3C-SiC Heteroepitaxial Growth by Vapor-Liquid-Solid Mechanism on Patterned 4H-SiC Substrate Using Si-Ge Melt

G. Ferro, D. Tournier, M. Lazar, 2011 .

Low Doped 3C-SiC Layers Deposited by the Vapour-Liquid-Solid Mechanism on 6H-SiC Substrates

G. Ferro, S. Juillaguet, J. Camassel, 2010 .

On the Mechanism of Twin Boundary Elimination in 3C-SiC(111) Heteroepitaxial Layers on α-SiC Substrates

G. Ferro, E. Polychroniadis, M. Marinova, 2011 .

Effect of nitrogen impurity on the stabilization of 3C–SiC polytype during heteroepitaxial growth by vapor–liquid–solid mechanism on 6H–SiC substrates

G. Ferro, F. Cauwet, V. Souliere, 2011 .

Further Evidence of Nitrogen Induced Stabilization of 3C-SiC Polytype during Growth from a Si-Ge Liquid Phase

D. Chaussende, G. Ferro, O. Dezellus, 2010 .

Properties of 3C-SiC Grown by Sublimation Epitaxy on Different Type of Substrates

G. Ferro, M. Syväjärvi, R. Yakimova, 2010 .

Effect of initial substrate conditions on growth of cubic silicon carbide

G. Ferro, M. Syväjärvi, R. Yakimova, 2011 .

Investigation of 3C-SiC(111) Homoepitaxial Growth by CVD at High Temperature

G. Ferro, F. Cauwet, V. Souliere, 2010 .

Evolution of 3C-SiC islands nucleated from a liquid phase on Si face α-SiC substrates

D. Chaussende, G. Ferro, P. Miele, 2010 .

3C-SiC MOS Based Devices: From Material Growth to Device Characterization

G. Ferro, S. Reshanov, A. Schöner, 2011 .

Searching for Ge Clusters inside 3C-SiC Layers Grown by Vapor-Liquid-Solid Mechanism on 6H-SiC Substrates

G. Ferro, E. Polychroniadis, M. Marinova, 2009 .

Sublimation Growth and Structural Characterization of 3C-SiC on Hexagonal and Cubic SiC Seeds

G. Ferro, M. Syväjärvi, R. Yakimova, 2010 .

Influence of the C/Si Ratio on the Dopant Concentration and Defects in CVD Grown 3C‐SiC Homoepitaxial Layers

G. Ferro, E. Polychroniadis, S. Juillaguet, 2010 .

Influence of Ga doping on the microstructure of 3C-SiC layers grown on 4H-SiC substrates by VLS mechanism

G. Ferro, E. Polychroniadis, M. Marinova, 2013 .

Elimination of Twin Boundaries when Growing 3C-SiC Heteroepitaxial by Vapour-Liquid-Solid Mechanism on Patterned 4H-SiC Substrate

G. Ferro, D. Tournier, M. Lazar, 2012 .

Nondestructive Evaluation of Photo-Electrical Properties of 3C-SiC (111) Homoepitaxial Layers Grown by CVD

G. Ferro, K. Jarašiūnas, A. Boulle, 2011 .

Influence of Post-Growth Annealing on the Defects Nature and Distribution in VLS Grown (111) 3C-SiC Layers

G. Ferro, E. Polychroniadis, S. Juillaguet, 2011 .

Investigation of 3C-SiC Lateral Growth on 4H-SiC Mesas

G. Ferro, D. Tournier, M. Lazar, 2011 .

TEM and LTPL Investigations of 3C-SiC Layers Grown by LPE on (100) and (111) 3C-SiC Seeds

D. Chaussende, G. Ferro, E. Polychroniadis, 2010 .

Is the Liquid Phase a Viable Approach for Bulk Growth of 3C-SiC?

D. Chaussende, G. Ferro, J. Dedulle, 2010 .

Seeding Layer Influence on the Low Temperature Photoluminescence Intensity of 3C-SiC Grown on 6H-SiC by Sublimation Epitaxy

G. Ferro, M. Syväjärvi, R. Vasiliauskas, 2012 .

MOS Capacitors Fabricated on 3C-SiC(111) Layers Grown on 6H-SiC(0001)

G. Ferro, S. Reshanov, A. Schöner, 2011 .

Growing 3C-SiC heteroepitaxial layers on α-SiC substrate by vapour-liquid-solid mechanism from the Al―Ge―Si ternary system

G. Ferro, F. Cauwet, V. Souliere, 2011 .

Optical Characterization of VLS+CVD Grown 3C-SiC Films by Non-Linear and Photoluminescence Techniques

G. Ferro, K. Jarašiūnas, S. Juillaguet, 2010 .

Nano-Electro-Structural Evolution of Ni-Si Ohmic Contacts to 3C-SiC

G. Ferro, G. Moschetti, F. Giannazzo, 2009 .

Defect-induced polytype transformations in LPE grown SiC epilayers on (1 1 1) 3C-SiC seeds grown by VLS on 6H-SiC

D. Chaussende, G. Ferro, E. Polychroniadis, 2009 .

On Applicability of Time-Resolved Optical Techniques for Characterization of Differently Grown 3C-SiC Crystals and Heterostructures

G. Ferro, M. Syväjärvi, R. Yakimova, 2012 .

Structural and Optical Investigation of VLS Grown (111) 3C-SiC Layers on 6H-SiC Substrates in Sn-Based Melts

G. Ferro, E. Polychroniadis, S. Juillaguet, 2011 .

Defects in (111) 3C‐SiC layers grown at different temperatures by VLS and CVD on 6H‐SiC substrates

G. Ferro, E. Polychroniadis, M. Marinova, 2010 .