John J. Barnes

Two 64K CMOS SRAMs with 13ns access time

R. I. Kung, Paul A. Reed, Stephen T. Flannagan, 1986, 1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.

Two-13 ns-64K CMOS SRAM's with very low active power and improved asynchronous circuit techniques

R. I. Kung, Paul A. Reed, Stephen T. Flannagan, 1986 .

Statistical Circuit Simulation Modeling of CMOS VLSI

John J. Barnes, Norm Herr, J. Barnes, 1986, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.

WPM 7.4: VMOS Memory Technology

John J. Barnes, J. Donald Trotter, Thurman John Rodgers, 1977 .

Operation and characterization of N-channel EPROM cells

John J. Barnes, Jeff L. Linden, John R. Edwards, 1976 .

High Density Fetmos Eeprom Cell Using ONO Inter-Polysilicon Dielectrics

John J. Barnes, John R. Yeargain, Clinton Kuo, 1985, 1985 Symposium on VLSI Technology. Digest of Technical Papers.