J. Lee

Improved sidewall doping of extensions by AsH3 ion assisted deposition and doping (IADD) with small implant angle for scaled NMOS Si bulk FinFETs

K. B. Noh, M. Kim, S. Chew, 2013, 2013 IEEE International Electron Devices Meeting.

Low frequency noise performance of gate-first and replacement metal gate CMOS technologies

N. Horiguchi, A. Veloso, V. Paraschiv, 2013, 2013 IEEE International Conference of Electron Devices and Solid-state Circuits.

Phosphorus doped SiC Source Drain and SiGe channel for scaled bulk FinFETs

R. Ritzenthaler, A. Hikavyy, G. Mannaert, 2012, 2012 International Electron Devices Meeting.

Buried Power Rail Metal exploration towards the 1 nm Node

H. Mertens, K. Devriendt, J. Geypen, 2021, 2021 IEEE International Electron Devices Meeting (IEDM).

Highly scalable effective work function engineering approach for multi-VT modulation of planar and FinFET-based RMG high-k last devices for (Sub-)22nm nodes

E. Simoen, E. Vecchio, H. Bender, 2013, 2013 Symposium on VLSI Technology.

Heated implantation with amorphous Carbon CMOS mask for scaled FinFETs

R. Ritzenthaler, G. Mannaert, H. Dekkers, 2013, 2013 Symposium on VLSI Technology.