K. Wünstel

发表

Interstitial iron and iron-acceptor pairs in silicon

P. Wagner, K. Wünstel, 1982 .

The effect of arsenic vapour species on electrical and optical properties of GaAs grown by molecular beam epitaxy

K. Ploog, H. Künzel, K. Wünstel, 1982 .

Influence of alloy composition, substrate temperature, and doping concentration on electrical properties of Si-doped n-Alx Ga1−x As grown by molecular beam epitaxy

K. Ploog, H. Künzel, K. Wünstel, 1984 .

Thermal donors in silicon: Consistent interpretation of Hall-effect and capacitance transient spectroscopy

W. Keller, K. Wünstel, 1983 .

Iron-related deep levels in silicon

P. Wagner, K. Wünstel, 1981 .

Deep levels related to transition metals in Si under hydrostatic pressure

W. Jantsch, P. Wagner, O. Kumagai, 1982 .

Deep levels in semiconductors — Influence of hydrostatic pressure

P. Vogl, W. Jantsch, O. Kumagai, 1983 .

Dovetail-DCPBH-Laser for High Bitrates and Monolithic Integration

F. Tegude, O. Hildebrand, K. Wünstel, 1987 .

Agenda FIA - Prague "Management and Service-aware Networking Architectures (MANA)" Session -12 th May 2009

Philip L. Eardley, Peter T. Kirstein, Alex Galis, 2009 .

Deep levels in semiconductors: A quantitative criterion

P. Vogl, W. Jantsch, O. Kumagai, 1982 .

Investigation of impurity levels inn-type indium selenide by means of Hall effect and deep level transient spectroscopy

A. Chevy, A. Segura, K. Wünstel, 1983 .

Deep traps in GaAs under hydrostatic pressure

W. Jantsch, O. Kumagai, K. Wünstel, 1982 .

Iron-related defects in silicon

P. Wagner, K. Wünstel, K. Froehner, 1983 .

Deformation-free overgrowth of reactive ion beam etched submicron structures in InP by liquid phase epitaxy

M. Schilling, K. Wünstel, 1986 .