Hiroyuki Fukuyama

发表

Study of a PMD Tolerance Extension by InP HBT Analog EDC IC without Adaptive Control in 43G DQPSK Transmission

Kimikazu Sano, Koichi Murata, Toshihiro Itoh, 2010, IEICE Trans. Electron..

An InP-Based 27-GHz-Bandwidth Limiting TIA IC Designed to Suppress Undershoot and Ringing in Its Output Waveform

Munehiko Nagatani, Hideyuki Nosaka, Shogo Yamanaka, 2016, IEICE Trans. Electron..

A Summer-Embedded Sense Amplifier for High-Speed Decision Feedback Equalizer

Hideyuki Nosaka, Naoki Miura, Il-Min Yi, 2018, IEICE Trans. Fundam. Electron. Commun. Comput. Sci..

Wide dynamic range transimpedance amplifier IC for 100-G DP-QPSK optical links using 1-µm InP HBTs

Hideyuki Nosaka, Kimikazu Sano, Koichi Murata, 2012, IEICE Electron. Express.

A low-power direct digital synthesizer using a self-adjusting phase-interpolation technique

Hideyuki Nosaka, Masahiro Muraguchi, Akihiro Yamagishi, 2001, IEEE J. Solid State Circuits.

Effects of Preamplifier Nonlinearity on PMD Equalization with Electronic Dispersion Compensation for 43G DQPSK

Koichi Murata, Toshihiro Itoh, Hiroyuki Fukuyama, 2011, IEICE Trans. Electron..

A 45 Gb/s, 98 fJ/bit, 0.02 mm2 Transimpedance Amplifier with Peaking-Dedicated Inductor in 65-nm CMOS

Hidetoshi Onodera, Hideyuki Nosaka, Akira Tsuchiya, 2019, 2019 32nd IEEE International System-on-Chip Conference (SOCC).

A Low Input Referred Noise and Low Crosstalk Noise 25 Gb/s Transimpedance Amplifier with Inductor-Less Bandwidth Compensation

Hidetoshi Onodera, Hideyuki Nosaka, Akira Tsuchiya, 2018, 2018 IEEE Asian Solid-State Circuits Conference (A-SSCC).

100-Gbit/s PDM-QPSK coherent receiver with wide dynamic range and excellent common-mode rejection ratio

Hideyuki Nosaka, Kimikazu Sano, Koichi Murata, 2011, 2011 37th European Conference and Exhibition on Optical Communication.

Electrical PMD Equalizer ICs for 40-Gbit/s Optical Transmissions

Hideyuki Nosaka, Masami Tokumitsu, Makoto Nakamura, 2004 .

A Very High-Order Subharmonically Injection-Locked Oscillator Using a Resonant-Tunneling HEMT

Ichihiko Toyoda, Tsuneo Tokumitsu, Masayoshi Tanaka, 1998, 1998 28th European Microwave Conference.

Design of a 45 Gb/s, 98 fJ/bit, 0.02 mm2 Transimpedance Amplifier with Peaking-Dedicated Inductor in 65-nm CMOS

Hidetoshi Onodera, Hideyuki Nosaka, Akira Tsuchiya, 2020, IEICE Trans. Electron..

Ultra-high-temperature thermophysical property measurements for next-generation material process informatics

Hiroyuki Fukuyama, 2017 .

A-5-6 A Study of Spreading Code for Optical CDMA

Masahiro Muraguchi, Michihiro Hirata, Hiroyuki Fukuyama, 2006 .

An 80-Gbaud Transmitter using Bandwidth Interleaving with Sideband Cancelling Method

Munehiko Nagatani, Hideyuki Nosaka, Hiroshi Yamazaki, 2018, 2018 48th European Microwave Conference (EuMC).

Sampling phase detector using a resonant tunneling high electron mobility transistor for microwave phase-locked oscillators

Hiroshi Okazaki, Masahiro Muraguchi, Tadao Nakagawa, 1998, IEEE Trans. Very Large Scale Integr. Syst..

Compact 100 Gb/s DP-QPSK Integrated Receiver Module Employing Three-dimensional Assembly Technology

Eiji Yoshida, Mikitaka Itoh, Yasuhiko Nakanishi, 2013 .

A 15.1-mW 6-GS/s 6-bit Flash ADC with Selectively Activated 8× Time-Domain Interpolation

Hideyuki Nosaka, Naoki Miura, Il-Min Yi, 2018, 2018 IEEE Asian Solid-State Circuits Conference (A-SSCC).

100-Gbit/s PDM-QPSK coherent receiver with wide dynamic range and excellent common-mode rejection ratio

Hideyuki Nosaka, Kimikazu Sano, Koichi Murata, 2011 .

Solid-state reaction kinetics of the system CaO-FeO

Khalid Hossain, Hiroyuki Fukuyama, Kazuhiro Nagata, 2002 .

Influence of sputtering parameters on the crystallinity and crystal orientation of AlN layers deposited by RF sputtering using the AlN target

Hiroyuki Fukuyama, Hidekazu Kobatake, Makoto Ohtsuka, 2009 .

Impact of high-temperature annealing of AlN layer on sapphire and its thermodynamic principle

Hiroyuki Fukuyama, Hideto Miyake, Kazumasa Hiramatsu, 2016 .

Effect of sputtering pressure on crystalline quality and residual stress of AlN films deposited at 823 K on nitrided sapphire substrates by pulsed DC reactive sputtering

Hiroyuki Fukuyama, Hiroto Takeuchi, Makoto Ohtsuka, 2016 .

Influence of sputter power and N2 gas flow ratio on crystalline quality of AlN layers deposited at 823 K by RF reactive sputtering

Hiroyuki Fukuyama, Makoto Ohtsuka, Kazuya Takada, 2012 .

Effect of static magnetic field on a thermal conductivity measurement of a molten droplet using an electromagnetic levitation technique

Takao Tsukada, Hiroyuki Fukuyama, Hidekazu Kobatake, 2009 .

High-Temperature Measurements of Materials

Hiroyuki Fukuyama, Yoshio Waseda, Y. Waseda, 2009 .

Annealing of an AlN buffer layer in N2–CO for growth of a high-quality AlN film on sapphire

Hiroyuki Fukuyama, Hideto Miyake, Kazumasa Hiramatsu, 2016 .

Thermal conductivities of silicon and germanium in solid and liquid states measured by non-stationary hot wire method with silica coated probe

Eiji Yamasue, Hiroyuki Fukuyama, Kazuhiro Nagata, 2002 .