D. Zhou

Investigation of O3‐Al2O3/H2O‐Al2O3 dielectric bilayer deposited by atomic‐layer deposition for GaN MOS capacitors

Baijun Zhang, Yao Yao, J. Ao, 2016 .

Influence of the Aln/Gan superlattices buffer thickness on the electrical properties of Algan/Gan HFET on Si substrate

Baijun Zhang, Liuan Li, Fan Yang, 2016, 2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

High Threshold Voltage Uniformity and Low Hysteresis Recessed-Gate Al2O3/AlN/GaN MISFET by Selective Area Growth

Baijun Zhang, Yao Yao, Liuan Li, 2017, IEEE Transactions on Electron Devices.

Influence of interface contamination on transport properties of two-dimensional electron gas in selective area growth AlGaN/GaN heterostructure

Baijun Zhang, Yao Yao, Liuan Li, 2016, Journal of Materials Science: Materials in Electronics.

Influence of the carbon-doping location on the material and electrical properties of a AlGaN/GaN heterostructure on Si substrate

Baijun Zhang, Yao Yao, Guilin Zhou, 2015 .

Low-leakage current and high-breakdown voltage GaN-on-Si (111) System with an AlGaN impurity blocking layer

Baijun Zhang, Fan Yang, Zijun Chen, 2016, Journal of Materials Science: Materials in Electronics.

Current transport mechanism of AlGaN/GaN Schottky barrier diode with fully recessed Schottky anode

Baijun Zhang, Yao Yao, Guilin Zhou, 2014 .

Effect of AlN/GaN superlattice buffer on the strain state in GaN-on-Si(111) system

Baijun Zhang, Yao Yao, Guilin Zhou, 2014 .

Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect transistors grown on Si substrate

Baijun Zhang, Yao Yao, Guilin Zhou, 2015 .

The suppression of background doping in selective area growth technique for high performance normally-off AlGaN/GaN MOSFET

Baijun Zhang, Yao Yao, Guilin Zhou, 2015, Journal of Materials Science: Materials in Electronics.

The breakdown behavior of GaN epitaxial material on silicon

Baijun Zhang, Liuan Li, Fan Yang, 2016, 2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

The influences of AlN/GaN superlattices buffer on the characteristics of AlGaN/GaN-on-Si (111) template

Baijun Zhang, Yao Yao, Guilin Zhou, 2015 .

Reduction of leakage current by O2 plasma treatment for device isolation of AlGaN/GaN heterojunction field-effect transistors

J. Ao, Dejun Wang, Liuan Li, 2015 .