M. Okigawa

发表

Laser-induced optical reflection and absorption of GaP

N. Itoh, T. Nakayama, M. Okigawa, 1985 .

A new type of laser-induced surface damage of GaAs

N. Itoh, K. Takayama, T. Nakayama, 1984 .

Laser-induced sputtering of oxides and compound semiconductors

N. Itoh, T. Nakayama, M. Okigawa, 1984 .

Dependence of laser‐induced damage of surface layers of GaP on pulse width and wavelength

N. Itoh, K. Morita, T. Nakayama, 1983 .

Characterization of 100 MHz inductively coupled plasma (ICP) by comparison with 13.56 MHz ICP

M. Sekine, S. Morishita, S. Noda, 1999 .

Plasma-Radiation-Induced Interface States in Metal-Nitride-Oxide-Silicon Structure of Charge-Coupled Device Image Sensor and Their Reduction Using Pulse-Time-Modulated Plasma

S. Samukawa, Y. Ishikawa, M. Okigawa, 2003 .

Reduction of plasma-induced damage in SiO2 films during pulse-time-modulated plasma irradiation

S. Yamasaki, S. Samukawa, Y. Ishikawa, 2005 .

Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precursor supply conditions on crystal properties

T. Shinohe, Y. Oshima, T. Oshima, 2020, Semiconductor Science and Technology.

Prediction of ultraviolet-induced damage during plasma processes in dielectric films using on-wafer monitoring techniques

S. Samukawa, Y. Katoh, Y. Ishikawa, 2005 .

In vacuo measurements of dangling bonds created during Ar-diluted fluorocarbon plasma etching of silicon dioxide films

S. Yamasaki, S. Samukawa, K. Ishikawa, 2005 .

In vacuo electron-spin-resonance study on amorphous fluorinated carbon films for understanding of surface chemical reactions in plasma etching

S. Yamasaki, M. Sekine, T. Yasuda, 2002 .

On-Wafer Monitoring of Vacuum-Ultraviolet Radiation Damage in High-Density Plasma Processes

S. Samukawa, S. Kumagai, Y. Ishikawa, 2001 .

Effects of Thermal Annealing for Restoration of UV Irradiation Damage during Plasma Etching Processes

S. Samukawa, Y. Ichihashi, R. Shimizu, 2006 .

Mechanism of Radical Control in Capacitive RF Plasma for ULSI Processing

H. Hayashi, S. Morishita, S. Noda, 1998 .

Reduction of ultraviolet-radiation damage in SiO2 using pulse-time-modulated plasma and its application to charge coupled 44 device image sensor processes

S. Samukawa, Y. Ishikawa, M. Okigawa, 2003 .

Control of surface reactions in high-performance SiO2 etching

Miyako Matsui, Makoto Sekine, Tetsuya Tatsumi, 2000 .

Elimination of threading dislocations in α-Ga2O3 by double-layered epitaxial lateral overgrowth

T. Shinohe, Y. Oshima, K. Kawara, 2020, Applied Physics Express.

Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy

T. Shinohe, Y. Oshima, T. Oshima, 2020, Japanese Journal of Applied Physics.

Ultraviolet-induced damage in fluorocarbon plasma and its reduction by pulse-time-modulated plasma in charge coupled device image sensor wafer processes

S. Samukawa, Y. Ichihashi, Y. Ishikawa, 2004 .

Mechanism of fluorine reduction in C4F8/Ar parallel-plate-type electron-cyclotron-resonance plasma by a Si top plate

H. Hayashi, M. Sekine, S. Morishita, 1999 .

Monitoring of Electron Energy Distribution Change from Optical Emission for Nonmagnetic Ultrahigh-Frequency Plasma

K. Kinoshita, S. Noda, Y. Hikosaka, 1998 .

Defect-insensitive current–voltage characteristics of Schottky barrier diode formed on heteroepitaxial α-Ga2O3 grown by mist chemical vapor deposition

T. Shinohe, I. Takahashi, T. Maeda, 2020 .

In-plane anisotropy in the direction of the dislocation bending in α-Ga2O3 grown by epitaxial lateral overgrowth

T. Shinohe, T. Oshima, K. Kawara, 2020, Applied Physics Express.