J. Fletcher

发表

Melting phenomena and pulsed‐laser annealing in semiconductors

J. Narayan, C. White, W. Christie, 1981 .

Melting and Laser Annealing in Semiconductors using 0.485 μm and 0.193 μm Pulsed Lasers

J. Narayan, R. Eby, J. Fletcher, 1980 .

TRANSPORT AND IONIZATION PROPERTIES OF MOLECULAR GASES IN A TRANSVERSE MAGNETIC FIELD.

S. Haydon, J. Fletcher, 1966 .

Electron-molecule collision ionization in hydrogen and deuterium

J. Fletcher, I. Cowling, 1973 .

Electron impact ionization of neon and argon

J. Fletcher, I. Cowling, 1973 .

Radiation Damage and its Annealing in Semiconductors

J. Narayan, J. Fletcher, 1980 .

Distortion and uncertainty in chirped pulse THz.

John Fletcher, J. Fletcher, 2002, Optics express.