R. Langfeld

CO2-laser induced annealing and diffusion in high energy As-ion-implanted silicon

K. Bethge, H. Baumann, R. Langfeld, 1981 .

CO2-LASER ANNEALING OF BURIED LAYERS PRODUCED BY MEV ION IMPLANTATION

H. Runge, H. Boroffka, R. Langfeld, 1980 .

A new method of analysis of DLTS-spectra

R. Langfeld, 1987 .

Electron beam annealed Ge-WSi-Au and Ge-Ni-WSi-Au high temperature stable ohmic contacts on n-GaAs

A. G. Nassibian, H. Hartnagel, J. Würfl, 1989 .

Modelling of Dopant Profiles Modified by Diffusing Defects in Polycrystalline Silicon

E. Krimmel, R. Langfeld, A. G. K. Lutscii, 1985, April 16.

Time-resolved defect production and annealing during electron-beam processing of silicon

W. Wondrak, E. Krimmel, K. Bethge, 1984 .