S. Sienz

发表

Study of stress evolution of boron nitride films prepared by ion assisted deposition

B. Rauschenbach, M. Zeitler, S. Sienz, 1999 .

In-situ stress measurement during the ion implantation-induced doping of gallium nitride

S. Bader, A. Lell, V. Härle, 2002 .

Stress Formation in Boron Nitride Films Prepared by Ion Beam Assisted Deposition

B. Rauschenbach, S. Sienz, 1999 .

Highly sensitive in-situ monitoring of mechanical stress during ion-beam-assisted deposition of thin titanium nitride films

B. Rauschenbach, M. Moske, J. Gerlach, 1998 .

In situ stress analysis of boron nitride films prepared by ion beam assisted deposition

M. Zeuner, H. Neumann, B. Rauschenbach, 1998 .

In situ stress measurements during low-energy nitriding of stainless steel

S. Mändl, B. Rauschenbach, S. Sienz, 2002 .

Dependence of ion beam induced nitrogen diffusion in aluminum on oxygen impurities

S. Mändl, B. Rauschenbach, J. Gerlach, 2002 .

Influence of defects in low-energy nitrogen ion beam assisted gallium nitride thin film deposition

B. Rauschenbach, J. Gerlach, S. Sienz, 2001 .

Ion-beam-assisted molecular-beam epitaxy: a method to deposit gallium nitride films with high crystalline quality

A. Sidorenko, B. Rauschenbach, T. Höche, 2004 .

Comparison of ion-beam-assisted molecular beam epitaxy with conventional molecular beam epitaxy of thin hexagonal gallium nitride films

A. Sidorenko, T. Mayerhöfer, B. Rauschenbach, 2004 .

Synthesis of metal nitrides by low-energy ion assisted film growth

B. Rauschenbach, J. Gerlach, S. Six, 2001 .