J. Oh

发表

Molecular‐beam epitaxial growth of high‐quality InSb on InP and GaAs substrates

P. Bhattacharya, S. Tsukamoto, Yu‐Cheng Chen, 1989 .

Estimate of the nonradiative carrier lifetime in InGaN/GaN quantum well structures by using time-resolved photoluminescence

H. Ryu, J. Shim, Dong-Soo Shin, 2012 .

Nonalloyed and alloyed low‐resistance ohmic contacts with good morphology for GaAs using a graded InGaAs cap layer

G. Haddad, I. Mehdi, J. East, 1989 .

Electrical control of superposed quantum states evolution in quantum dot molecule by pulsed field

D. Ahn, S. W. Hwang, M. Son, 2001, quant-ph/0107141.

Investigation of the interface region produced by molecular beam epitaxial regrowth

Paul R. Berger, P. Bhattacharya, D. Biswas, 1989 .

Microstructural characteristics of AlN thin layers grown on Si ( 110 ) substrates by molecular beam epitaxy : Transmission electron microscopy study

Y. H. Kim, J. H. Lee, S. Ahn, 2015 .

Effects of BF2+ implants on titanium silicide formation by rapid thermal annealing

Jinwoo Choi, S. Paek, Yubin Hwang, 1992 .

Piezoreflectance characterization of double‐barrier resonant tunneling structures

P. Bhattacharya, J. Pamulapati, R. Tober, 1988 .

X‐ray photoelectron spectroscopy and cross‐sectional transmission electron microscopy studies of titanium nitride/titanium/silicon structures after thermal annealing

Dongwon Shin, J. Lee, S. Ryu, 1993 .

In‐plane hole effective masses in InxGa1−xAs/Al0.15Ga0.85As modulation‐doped heterostructures

J. Pamulapati, Jasprit Singh, M. Jaffe, 1989 .

Transport experiments on InAs self-assembled quantum dots in the microwave regime

D. Ahn, S. Hwang, Sanghoon Lee, 2005 .

Charge-density domains in photoexcited quantum-well structures

P. Bhattacharya, R. Merlin, A. McKiernan, 1990 .

Enhancement of titanium nitride barrier metal properties by nitrogen radical assisted metalorganic chemical vapor deposition

S. Paek, Y. H. Chang, S. Won, 1996 .

The dependence of the electrical and optical properties of molecular beam epitaxial Ino.52Alo.48As on growth parameters: Interplay of surface kinetics and thermodynamics

P. Bhattacharya, O. Aina, M. Mattingly, 1990 .

Interface states in modulation-doped In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As heterostructures

P. Bhattacharya, T. Tiwald, W. Hong, 1988 .

Study of droop phenomena in InGaN-based blue and green light-emitting diodes by temperature-dependent electroluminescence

Jong-In Shim, Dong-Pyo Han, J. Shim, 2012 .

Integrated multi-quantum-well controller-modulator with high gain for low-power photonic switching

Songcheol Hong, Jasprit Singh, P. Bhattacharya, 1989 .

Piezoreflectance characterization of resonant tunneling and modulation-doped heterostructures

P. Bhattacharya, J. Pamulapati, J. Oh, 1989 .

Optical characterization of coherently strained short-period superlattice (InAs) n (AlAs) n grown by molecular beam epitaxy

D. W. Kim, Y. Leem, T. Hsu, 1992 .

Transmission electron microscopy study of the initial growth stage of GaSb grown on Si (001 ) substrate by molecular beam epitaxy method

Kyungmin Chung, Y. Noh, J. Oh, 2010 .

Photoluminescence studies of GaN nanorods on Si (111) substrates grown by molecular-beam epitaxy

Dejun Fu, T. W. Kang, T. Kang, 2004 .