P. Sallagoity

发表

Arsenic-Only Preamorphization Process Extension For TiSi 2 Formation Down to 65-nm Gate Lengths

A. Losavio, P. Sallagoity, 1999 .

STI process steps for sub-quarter micron CMOS

M. Haond, P. Sallagoity, F Gaillard, 1998 .