V. Romanov

Intense interface luminescence in type II narrow-gap InAs-based heterostructures at room temperature

Eduard Hulicius, Maya Mikhailova, M. Mikhailova, 2010 .

Band Diagram of the InAs1 – ySby/InAsSbP Heterojunction in the Composition Range y < 0.2

K. Moiseev, V. Romanov, 2021, Physics of the Solid State.

Photoluminescence Spectroscopy of the InAsSb-Based p-i-n Heterostructure

K. Moiseev, M. Motyka, V. Romanov, 2022, Materials.

Nanoheterostructures with InSb quantum dashes inserted in the InAs unipolar matrix

K. Moiseev, E. Ivanov, P. Dement’ev, 2015 .