H. Kanber

发表

Study of cr, si and mn distribution in semi-insulating gaas after annealing with and without SiO2 in an H2-AS4 atmosphere

W. B. Henderson, M. Feng, V. Eu, 1981 .

Role of vanadium in organometallic vapor phase epitaxy grown GaAs

W. S. Hobson, A. S. Jordan, S. Pearton, 1989 .

Origin and reduction of impurities at GaAs epitaxial layer-substrate interfaces

J. M. Whelan, H. T. Yang, H. Kanber, 1988 .

Materials Science Dept., University of Southern California

J. M. Whelan, L. Angeles, M. Feng, 2017 .

Comparison of rapid thermal annealing and controlled atmosphere annealing of ion implanted GaAs

H. Kanber, 1987 .

Rapid thermal annealing of Si implanted GaAs for power field‐effect transistors

J. M. Whelan, W. B. Henderson, M. Siracusa, 1985 .

A comparison of rapid thermal annealing and controlled atmosphere annealing of Si‐implanted GaAs

J. M. Whelan, W. B. Henderson, H. Kanber, 1985 .

Study of manganese accumulation in ion implanted GaAs influenced by Fermi energy and annealing technique

J. M. Whelan, M. Feng, H. Kanber, 1984 .

Rapid Thermal Annealing of Si-Implanted GaAs for Power FETs

J. M. Whelan, H. Kanber, R. Cipolli, 1984 .

Characterization of Ion Implantation Damage in Capless Annealed GaAs

J. M. Whelan, M. Feng, H. Kanber, 1983 .

First-Order Torques and Solid-Body Spinning Velocities in Intense Sound Fields

H. Kanber, I. Rudnick, T. G. Wang, 1977 .

Correlation between chemical and electrical profiles in Si+, Se+ and S+ implanted bulk and epitaxial GaAs

W. B. Henderson, M. Feng, V. Eu, 1982 .

Redistribution of manganese after annealing of GaAs implanted with Si+ and Se+

H. Kanber, Milton Feng, J. M. Whelan, 1982 .

Ultrahigh frequency operation of ion-implanted GaAs metal-semiconductor field-effect transistors

H. Kanber, Milton Feng, E. T. Watkins, 1984 .

Low noise GaAs metal‐semiconductor field‐effect transistor made by ion implantation

H. Kanber, Milton Feng, J. M. Schellenberg, 1982 .

Optimization of ohmic contacts for reliable heterostructure GaAs materials

C. S. Wu, M. Hu, H. Kanber, 1990 .

Growth and diffusion of abrupt beryllium‐doped profiles in gallium arsenide by organometallic vapor phase epitaxy

J. M. Whelan, B. Paine, M. Tejwani, 1988 .

High-efficiency GaAs power MESFETs prepared by ion implantation

H. Kanber, Milton Feng, M. Siracusa, 1982 .

GaAs MESFET's made by ion implantation into MOCVD Buffer layers

W. B. Henderson, M. Feng, V. Eu, 1984, IEEE Electron Device Letters.

CLASSICAL PHENOMENOLOGY: Electricity, Magnetism, Optics, Acoustics, Heat, Mechanics (PACS 41-52) 285 Effect of uniaxial stress on optical gain in semiconductors

J. O. Kephart, D. Thomson, N. Dutta, 1984 .

Properties of gaas:si epitaxial layers grown in a multiwafer MOCVD reactor

J. M. Whelan, H. Kanber, T. Zielinski, 1985 .

Characterization and Optimization of Mbe Grown GaAs On Silicon On Sapphire Incorporating A Low Temperature Buffer

R. Metzger, H. Kanber, Verett A. Mires, 1991 .

Acoustic driving of rotor

I. Rudnick, H. Kanber, T. Wang, 1979 .

Pseudomorphic HEMT manufacturing technology for multifunctional Ka-band MMIC applications

D. Bosch, H. Kanber, C. Seashore, 1995 .