Taeho Lee

Characterization of Ultra-Thin HfO$_2$ Gate Oxide Prepared by Using Atomic Layer Deposition

D. Choi, Yangdo Kim, Young-Bae Kim, 2003 .

Work Function Shift Mechanism of Metal-Gate Electrode with Ru/Ti Bilayer

D. Choi, Jinho Ahn, I. Park, 2007 .

Electrical Properties of Atomic Layer Deposited HfO2 Gate Dielectric Film Using D2O as Oxidant for Improved Reliability

H. Hwang, H. Sim, Jinho Ahn, 2006 .

Metal precursor effects on deposition and interfacial characteristics of HfO2 dielectrics grown by atomic layer deposition

D. Choi, Jinho Ahn, I. Park, 2006 .

Dry Etching of TaN/HfO2 Gate Stack Structure by Cl2/SF6/Ar Inductively Coupled Plasma

N. Lee, Jiyoung Kim, J. Ahn, 2005 .

Impact of Bottom Interfacial Layer on the Threshold Voltage and Device Reliability of Fluorine Incorporated PMOSFETS with High-K/Metal Gate

G. Bersuker, B. Lee, R. Choi, 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

Development of x-ray mask fabrication process using w-sputtering

Jinho Ahn, Taeho Lee, Seungyoon Lee, 1997 .