J. Bernstein

发表

High dose-rate hydrogen passivation of polycrystalline silicon CMOS TFTs by plasma ion implantation

T. King, S. Qin, Chung Chan, 1996 .

Short-Time Hydrogen Passivation of Poly-Si CMOS Thin film Transistors by High Dose Rate Plasma Ion Implantation

T. King, Yuanzhong Zhou, S. Qin, 1995 .

Hydrogenation of polycrystalline silicon thin film transistors by plasma ion implantation

Chung Chan, Tsu-Jae King, J. Bernstein, 1995, IEEE Electron Device Letters.

Hydrogen etching for semiconductor materials in plasma doping experiments

S. Qin, J. Bernstein, C. Chan, 1996 .

High dose rate hydrogen plasma ion implantation

S. Qin, J. Bernstein, C. Chan, 1996 .

Hydrogen Etching Effects During Plasma Doping Processes and Impact on Shallow Junction Formation

S. Qin, J. Bernstein, C. Chan, 1995 .

Ultrathin silicon oxynitride film formation by plasma immersion nitrogen implantation

A. S. Denholm, Martin L. Green, D. Eaglesham, 1999 .

Charging effects in plasma immersion ion implantation for microelectronics

S. Qin, Wei Liu, J. Bernstein, 1995 .

An investigation of dopant gases in plasma immersion ion implantation

S. Qin, J. Bernstein, C. Chan, 1995 .