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A polysilicon transistor technology for large capacity SRAMs

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Grain Boundary Properties of Boron-Doped Polycrystalline Si1-XGeX Resistors with Small Process Fluctuation and Small Drift for High Precision Analog ICs

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Preparation of SrBi/sub 2/Ta/sub 2/O/sub 9/ thin films with ultra-high resistance to annealing in hydrogen atmosphere for ferroelectric memories

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