Hongquan Yang

Improved crystalline quality of N-polar GaN epitaxial layers grown with reformed flow-rate-modulation technology

Yi-ping Cui, Jianguo Zhao, Xiong Zhang, 2016 .

Enhancement of performance of GaN-based light-emitting diodes by insertion and optimization of n-InGaN/GaN composite current-spreading layers

Xiong Zhang, Hao Guo, Jie Xu, 2014 .

Epitaxial growth of semi‐polar (11‐22) plane AlGaN epi‐layers on m‐plane (10‐10) sapphire substrates

Jianguo Zhao, Xiong Zhang, Zili Wu, 2017 .

Effects of Si-doping on structural, electrical, and optical properties of polar and non-polar AlGaN epi-layers

Jianguo Zhao, Xiong Zhang, Zili Wu, 2016 .

Effects of Si-doping on structural and electrical characteristics of polar, semi-polar, and non-polar AlGaN epi-layers

Xiong Zhang, Zili Wu, Q. Dai, 2016 .

Quantitative study for surface properties of AlGaN epi-layers by ARXPS

Xiong Zhang, Hongquan Yang, Yiping Cui, 2015 .

Enhanced performance of GaN-based light-emitting diodes by using a p-InAlGaN/GaN superlattice as electron blocking layer

Xiong Zhang, Hao Guo, Xianghua Zeng, 2013 .

Surface properties of AlN and AlxGa1−xN epitaxial layers characterized by angle resolved X-ray photoelectron spectroscopy

Xiong Zhang, Hongquan Yang, Ning Dai, 2015, Journal of Materials Science: Materials in Electronics.