C. Mitchell

发表

In situ measurements of GaN nucleation layer decompostion

A. Allerman, M. Coltrin, D. Koleske, 2003 .

Plan-view image contrast of dislocations in GaN

D. Koleske, D. Follstaedt, K. Cross, 2003 .

Mass transport and kinetic limitations in MOCVD selective-area growth

M. Coltrin, C. Mitchell, C. C. Mitchell, 2003 .

Cantilever Epitaxy of GaN on Sapphire: Further Reductions in Dislocation Density

A. Allerman, D. Koleske, C. Ashby, 2002 .

Minimizing threading dislocations by redirection during cantilever epitaxial growth of GaN

A. Allerman, D. Koleske, C. Ashby, 2002 .

Characterization of Dark-Block Defects in Cantilever Epitaxial GaN on Sapphire

A. Allerman, D. Koleske, C. Ashby, 2002 .

Mass transport in the epitaxial lateral overgrowth of gallium nitride

M. Coltrin, Jung Han, C. Mitchell, 2001 .

Modeling the parasitic chemical reactions of AlGaN organometallic vapor-phase epitaxy

M. Coltrin, J. R. Creighton, C. Mitchell, 2006 .

Low-Dislocation-Density GaN from a Single Growth on a Textured Substrate

Jung Han, Gregory M. Peake, Paula P. Provencio, 2000 .