S. Akintunde

Kinetics of growth of thin-films of Co2Si, Ni2Si, WSi2 and VSi2 during a reactive diffusion process

S. Akintunde, P. Selyshchev, 2016 .

Formation of Chemical Compound Layer at the Interface of Initial Substances A and B with Dominance of Diffusion of the A Atoms

P. Selyshchev, S. Akintunde, 2014 .

The influence of radiation-induced vacancy on the formation of thin-film of compound layer during a reactive diffusion process

S. Akintunde, P. Selyshchev, 2016 .