Y. Li

Improvement of the optical and photoelectric properties of hydrogenated amorphous silicon‐carbon alloys by using trisilylmethane as a feedstock

Y. Li, B. Fieselmann, 1991 .

Transport considerations in hydrogenated amorphous silicon materials with widely varying mobilities and the consequences on device performance

R. Collins, C. Wronski, C. Fortmann, 1993, Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9).

Progress towards high performance low cost a‐Si:H alloy multijunction modules

L. Yang, A. Catalano, R. D'aiello, 1992 .

Technological development for commercialization of amorphous silicon based multijunction modules

D. Carlson, L. Yang, J. Kessler, 1996 .

Nature and densities of gap states in a-Si:H and a-SiC:H obtained from the quantitative analysis of photoconductivity

C. Wronski, M. Gunes, N. Maley, 1991, The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991.

Novel Feedstocks for a-SiC:H Films

A. Catalano, Y. Li, B. Fieselmann, 1992 .

Novel feedstocks for a-SiC:H films and devices

A. Catalano, Y. Li, B. Fieselmann, 1991, The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991.

Progress in amorphous silicon based multijunction modules

D. Carlson, L. Yang, K. Jansen, 1994, Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC).

Comments on the Determination of Defect Density in a-Si:H Alloys by Integrating the Sub-Bandgap Optical Absorption Coefficient

W. Paul, Y. Li, 1991 .

An Exploratory Survey of p -Layers for a-Si:H Solar Cells

L. Russell, Y. Li, B. Fieselmann, 1994 .

Investigation of intrinsic defect states in hydrogenated amorphous silicon films using steady-state photoconductivity and sub-bandgap absorption

C. Wronski, C. Fortmann, M. Gunes, 1993, Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9).

First Demonstration of heterogenous Complementary FETs utilizing Low-Temperature (200 °C) Hetero-Layers Bonding Technique (LT-HBT)

H. J. Chen, J. Tarng, C. Su, 2020, 2020 IEEE International Electron Devices Meeting (IEDM).