H. Chou

发表

Band alignment at interfaces of amorphous Al2O3 with Ge1−xSnx- and strained Ge-based channels

C. Merckling, A. Stesmans, R. Loo, 2014 .

Charge instability of atomic-layer deposited TaSiOx insulators on Si, InP, and In0.53Ga0.47As

C. Adelmann, A. Stesmans, M. Houssa, 2012 .

Interface barriers at the interfaces of polar GaAs(111) faces with Al2O3

P. Hurley, A. Stesmans, P. Ye, 2012 .

Electronic structure of NiO layers grown on Al2O3 and SiO2 using metallo-organic chemical vapour deposition

L. Goux, D. Wouters, J. Kittl, 2011 .

Band offsets at the (100)GaSb/Al2O3 interface from internal electron photoemission study

C. Merckling, A. Stesmans, V. Afanas'ev, 2011 .

Electron band alignment at the interface of (100)GaSb with molecular-beam deposited Al2O3

C. Merckling, A. Stesmans, V. Afanas'ev, 2011 .

Invited) Vanadium Dioxide for Selector Applications

Iuliana Radu, Stefan De Gendt, Marc Heyns, 2013 .

Scanning Tunneling Spectroscopy Observation of Electronic Resonances Originating from 1 ×1 Potential on the Dense Pb Overlayer on Si(111)

T. Tsong, Y. Chiu, Chia‐Seng Chang, 2011 .

Electron band alignment at the interface of (100)InSb with atomic-layer deposited Al2O3

A. Stesmans, P. Ye, M. Houssa, 2012 .

Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3

P. Hurley, V. Afanas’ev, A. Stesmans, 2016 .

Band alignment and effective work function of atomic‐layer deposited VO2 and V2O5 films on SiO2 and Al2O3

I. Radu, V. Afanas’ev, A. Stesmans, 2015 .