Cheng Ge

Study on the self-absorption of InGaN quantum wells at high photon density.

Dunjun Chen, B. Liu, P. Han, 2020, Applied optics.

1.4-kV Quasi-Vertical GaN Schottky Barrier Diode With Reverse p-n Junction Termination

Dunjun Chen, B. Liu, Rong Zhang, 2020, IEEE Journal of the Electron Devices Society.

2.7-kV AlGaN/GaN Schottky barrier diode on silicon substrate with recessed-anode structure

Rong Zhang, Youdou Zheng, Bin Liu, 2020, 2007.03163.

High‐Responsivity Graphene/4H‐SiC Ultraviolet Photodetector Based on a Planar Junction Formed by the Dual Modulation of Electric and Light Fields

Dunjun Chen, P. Han, Rong Zhang, 2020, Advanced Optical Materials.