Dan N. Le

Plasma-Enhanced Atomic-Layer Deposition of Nanometer-Thick SiNx Films Using Trichlorodisilane for Etch-Resistant Coatings

Jaebeom Lee, Jiyoung Kim, H. S. Kim, 2021 .

Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source

Sang Woo Kim, R. Choi, J. Spiegelman, 2020, Materials.

Relaxation Induced by Imprint Phenomena in Low-Temperature (400 °C) Processed Hf0.5Zr0.5O2-Based Metal-Ferroelectric-Metal Capacitors

Jin-Hyun Kim, S. Hwang, Y. Jung, 2022, ACS Applied Electronic Materials.

A Novel Combinatorial Approach to the Ferroelectric Properties in HfxZr1−xO2 Deposited by Atomic Layer Deposition

Jin-Hyun Kim, H. S. Kim, S. Hwang, 2021, physica status solidi (RRL) – Rapid Research Letters.

Robust low-temperature (350 °C) ferroelectric Hf0.5Zr0.5O2 fabricated using anhydrous H2O2 as the ALD oxidant

Jin-Hyun Kim, J. Spiegelman, C. Nam, 2022, Applied Physics Letters.

Toward Low-Thermal-Budget Hafnia-Based Ferroelectrics via Atomic Layer Deposition

T. Nabatame, C. Nam, T. Onaya, 2023, ACS Applied Electronic Materials.