S. Ochi

MOCVD GaAs growth on Ge (100) and Si (100) substrates

K. Fujikawa, N. Hayafuji, T. Murotani, 1986 .

Growth of GaAs/AlGaAs quantum well structures using a large-scale MOCVD reactor

N. Hayafuji, Y. Kajikawa, T. Murotani, 1986 .

Undoped Al0.48In0.52As grown by metalorganic chemical vapor deposition as the current-blocking layer of laser diodes

T. Ishida, Tatsuya Kimura, E. Ishimura, 1996 .

Effectiveness of AlGaAs/GaAs superlattices in reducing dislocation density in GaAs on Si

N. Hayafuji, M. Miyashita, T. Murotani, 1988 .

Effect of cooling procedure after annealing on electrical properties of Cd0.2Hg0.8Te epitaxial films grown by liquid phase epitaxy

T. Sonoda, S. Takamiya, S. Ochi, 1995 .

Highly uniform growth of GaAs and AlGaAs by large-capacity MOCVD reactor

N. Hayafuji, T. Murotani, K. Mizuguchi, 1986 .