Gerard Ghibaudo

发表

Reliability issues of offset drain transistors after different modes of static electrical stress

Constantin Papadas, P. Mortini, C. Monserie, 1993 .

Accurate and efficient design of experiment for reliability assessment. Application to a 20 /spl Aring/ gate oxide

Gerard Ghibaudo, G. Pananakakis, David Roy, 2001, 2001 IEEE International Integrated Reliability Workshop. Final Report (Cat. No.01TH8580).

Electric field and temperature acceleration of quasi-breakdown phenomena in ultrathin oxides

Gerard Ghibaudo, David Roy, Emmanuel Vincent, 1998, 1998 IEEE International Integrated Reliability Workshop Final Report (Cat. No.98TH8363).

PROGRAMABLE SYSTEM FOR LOW FREQUENCY NOISE MEASUREMENTS IN MICROELECTRONICS DEVICES CONTACTED BY POINT PROBES

Gerard Ghibaudo, A. Szewczyk, L. Spiralski, 2003 .

Reliability issues of offset drain transistors after different modes of electrical stress

Constantin Papadas, P. Mortini, C. Monserie, 1993 .

Accelerated dielectric breakdown and wear out standard testing methods and structures for reliability evaluation of thin oxides

Constantin Papadas, Gerard Ghibaudo, G. Pananakakis, 1999 .

Static and low frequency noise characterization in surface- and buried-mode 0.1 μm PMOSFETS

G. Guegan, Gerard Ghibaudo, M. Fadlallah, 2003 .

Modeling and optimization of series resistance of planar MIM capacitors

Gerard Ghibaudo, G. Pananakakis, E. Picollet, 2006 .

Modeling of OxRAM variability from low to high resistance state using a stochastic trap assisted tunneling-based resistor network

Gerard Ghibaudo, Elisa Vianello, Philippe Candelier, 2015, EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon.

A Comparative Study of Minimal Supply Voltage of 6T-SRAM at the 16nm node using MASTAR into a Conventional CAD Environment

Frederic Boeuf, J. Lacord, Gerard Ghibaudo, 2012 .

Comment on “Channel Length and Threshold Voltage Dependence of a Transistor Mismatch in a 32-nm HKMG Technology”

Terence B. Hook, Gerard Ghibaudo, Jeffrey B. Johnson, 2011 .

Analytical modelling of the programmed window in flotox EEPROM cells

Constantin Papadas, Gerard Ghibaudo, G. Pananakakis, 1993 .

Numerical simulation and modeling of static characteristics and electrical noise in submicron MOS transistors

Gerard Ghibaudo, M. Zoaeter, J. Jomaah, 2000, ICECS 2000. 7th IEEE International Conference on Electronics, Circuits and Systems (Cat. No.00EX445).

Aging of 40nm MOSFET RF parameters under RF conditions from characterization to compact modeling for RF design

Gerard Ghibaudo, Alban Zaka, Daniel Gloria, 2011, 2011 IEEE Radio Frequency Integrated Circuits Symposium.

Mismatch Measure Improvement Using Kelvin Test Structures in Transistor Pair Configuration in Sub-Hundred Nanometer MOSFET Technology

Gerard Ghibaudo, Cecilia M. Mezzomo, Mathieu Marin, 2009, 2009 IEEE International Conference on Microelectronic Test Structures.

Analytical threshold voltage model for lightly doped short-channel tri-gate MOSFETs

Gerard Ghibaudo, G. Pananakakis, Nadine Collaert, 2011 .

Accurate and Ready-to-use Parasitic Capacitances Models for Advanced 2D/3D CMOS Device Structure Comparison

Frederic Boeuf, J. Lacord, Gerard Ghibaudo, 2011 .

Low Frequency Noise in High Speed SiGe:C HBTs after Forward and Mixed‐Mode Stress

Gerard Ghibaudo, Nathalie Revil, M. Marin, 2009 .

Low-frequency noise characterizations of back-gate ZnO nanorod field-effect transistor structure (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))

Gerard Ghibaudo, Gyu-Tae Kim, Jung-Il Lee, 2007 .

New access resistance extraction methodology for 14nm FD-SOI technology

Gerard Ghibaudo, Jean-Baptiste Henry, Quentin Rafhay, 2016, 2016 International Conference on Microelectronic Test Structures (ICMTS).

Modeling of the intrinsic retention characteristics of FLOTOX EEPROM cells under elevated temperature conditions

Federico Pio, Constantin Papadas, Gerard Ghibaudo, 1995 .

A new hot carrier degradation law for MOSFET lifetime prediction

Simon Deleonibus, Gerard Ghibaudo, Francis Balestra, 1998 .

Mismatch trends in 20nm gate-last bulk CMOS technology

Lama Rahhal, Gerard Ghibaudo, Julien Rosa, 2014, 2014 15th International Conference on Ultimate Integration on Silicon (ULIS).

Analog-Digital Circuit Design at Low Temperature.

Gerard Ghibaudo, P. Martin, M. Cavelier, 2008 .

Reliability issues of silicon-dioxide structures—Application to FLOTOX EEPROM cells

Constantin Papadas, C. Monserie, Gerard Ghibaudo, 1993 .

Numerical transient simulation of the programming window degradation in FLOTOX EEPROM cells

Constantin Papadas, Gerard Ghibaudo, G. Pananakakis, 1993 .

Symmetrical unified compact model of short-channel double-gate MOSFETs

Gerard Ghibaudo, Matthias Bucher, K. A. Papathanasiou, 2012 .

Understanding theCarbonImpact onSi/SiGe:C HBT BaseCurrent Mismatch

Gerard Ghibaudo, Stephane Danaie, Mathieu Marinn, 2007 .

Dynamic variability in 14 nm FD-SOI MOSFETs and transient simulation methodology

Gerard Ghibaudo, Charalabos A. Dimitriadis, Christoforos G. Theodorou, 2015 .

A Self-contained Defect-aware Module for Realistic Simulations of LFN, RTN and Time-dependent Variability in FD-SOI Devices and Circuits

Gerard Ghibaudo, Christoforos G. Theodorou, 2018, 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

Analysis and modeling of self-heating effects in thin-film SOI MOSFETs as a function of temperature

Gerard Ghibaudo, Francis Balestra, Jalal Jomaah, 1995 .

On the origin of the LF noise in Si/Ge MOSFETs

Gerard Ghibaudo, J. A. Chroboczek, 2002 .

Modeling of program, erase and retention characteristics of charge-trap gate all around memories

Gerard Ghibaudo, Etienne Nowak, Luca Perniola, 2011 .

Reliability simulations of the endurance performance of FLOTOX EEPROM cells using spice

Constantin Papadas, P. Mortini, Gerard Ghibaudo, 1993 .

Impact of source-to-drain tunnelling on the scalability of arbitrary oriented alternative channel material nMOSFETs

Gerard Ghibaudo, Raphael Clerc, Quentin Rafhay, 2008 .

Impact of dynamic variability on the operation of CMOS inverter

Gerard Ghibaudo, Sebastien Haendler, Charalabos A. Dimitriadis, 2013 .

Cascode configuration as a substitute to LDE MOSFET for improved electrical mismatch performance

Lama Rahhal, Gerard Ghibaudo, Guillaume Bertrand, 2014, 2014 International Conference on Microelectronic Test Structures (ICMTS).

Impact of low-frequency noise variability on statistical parameter extraction in ultra-scaled CMOS devices

Gerard Ghibaudo, Sebastien Haendler, Charalabos A. Dimitriadis, 2014 .

CMOS roadmap analysis from the perspective of III-V technology using MASTAR

Frederic Boeuf, Gerard Ghibaudo, Gaspard Hiblot, 2015, 2015 Silicon Nanoelectronics Workshop (SNW).

Revisited approach for the characterization of Gate Induced Drain Leakage

Maud Vinet, Gerard Ghibaudo, Perrine Batude, 2011 .

New method for the extraction of the coupling ratios in FLOTOX EEPROM cells

Constantin Papadas, P. Mortini, Gerard Ghibaudo, 1993 .

Folded fully depleted FET using Silicon-On-Nothing technology as a highly W-scaled planar solution

C. Laviron, Stephane Monfray, Claire Fenouillet-Beranger, 2009, ESSDERC 2009.

Advanced 1T1R test vehicle for RRAM nanosecond-range switching-time resolution and reliability assessment

Gilles Reimbold, Gerard Ghibaudo, Elisa Vianello, 2015, 2015 IEEE International Integrated Reliability Workshop (IIRW).

Analytical unified threshold voltage model of short-channel FinFETs and implementation

Gerard Ghibaudo, J. Jomaah, K. A. Papathanasiou, 2011 .

DC Characterization of Different Advanced MOSFET Architectures

Gerard Ghibaudo, Jalal Jomaah, Majida Fadlallah, 2011 .

A new model for the current factor mismatch in the MOS transistor

Gerard Ghibaudo, P. Llinares, R. Difrenza, 2003 .

Characterization of the effective mobility by split C(V) technique in sub 0.1 μm Si and SiGe PMOSFETs

Gerard Ghibaudo, Thomas Ernst, Francois Andrieu, 2005 .

Variability analysis - prediction method for nanoscale triple gate FinFETs

Gerard Ghibaudo, Dimitrios H. Tassis, Charalabos A. Dimitriadis, 2013 .

Evolution of low frequency noise and noise variability through CMOS bulk technology nodes

Gerard Ghibaudo, J. Rosa, Sebastien Haendler, 2013 .

Back biasing effects in tri-gate junctionless transistors

Sylvain Barraud, Gerard Ghibaudo, Gyu-Tae Kim, 2013 .

Stress-induced leakage current generation kinetics based on anode hole injection and hole dispersive transport

Gerard Ghibaudo, G. Pananakakis, P. Riess, 2000 .

Ultra-Thin (4nm) Gate-All-Around CMOS devices with High-k/Metal for Low Power Multimedia Applications

Nicolas Loubet, Stephane Monfray, G. Bidal, 2010 .

Assessment of interface state density in silicon metal‐oxide‐semiconductor transistors at room, liquid‐nitrogen, and liquid‐helium temperatures

Gerard Ghibaudo, I. M. Hafez, Francis Balestra, 1990 .

Temperature acceleration of breakdown and quasi-breakdown phenomena in ultra-thin oxides

Gerard Ghibaudo, David Roy, Emmanuel Vincent, 1999 .

Impact of Oxide Progressive Soft Breakdown: Experiment and Modeling.

Gerard Ghibaudo, G. Ribes, L. Gerrer, 2008 .

Accurate Boundary Condition for Short-Channel Effect Compact Modeling in MOS Devices

Frederic Boeuf, Gerard Ghibaudo, Gaspard Hiblot, 2015, IEEE Transactions on Electron Devices.

Low temperature operation of ultra-thin gate oxide sub-0.1 /spl mu/m MOSFETs

G. Guegan, Gerard Ghibaudo, B. Cretu, 2002 .

Temperature dependence of the Fowler–Nordheim current in metal‐oxide‐degenerate semiconductor structures

Constantin Papadas, Gerard Ghibaudo, G. Pananakakis, 1995 .

Impact of progressive oxide soft breakdown on metal oxide semiconductor parameters: Experiment and modeling

Gerard Ghibaudo, G. Ribes, L. Gerrer, 2009 .

Investigation of floating body effects in silicon‐on‐insulator metal‐oxide‐semiconductor field‐effect transistors

Sorin Cristoloveanu, Jean Brini, Gerard Ghibaudo, 1991 .

Modeling of low-frequency noise in advanced CMOS devices†

Gerard Ghibaudo, J. Jomaah, F. Balestra, 2015 .

Origin of the Asymmetry in the Statistical Variability of n- and p-channel Poly Si Gate Bulk MOSFETs

Asen Asenov, Gerard Ghibaudo, Binjie Cheng, 2008 .

Low frequency noise characterization of 0.18 μm Si CMOS transistors

Gerard Ghibaudo, T. Boutchacha, 1998 .

Breakdown characteristics of ultra thin gate oxides following field and temperature stresses

Gerard Ghibaudo, G. Ghibaudo, A. Halimaoui, 1997 .

Analytical low-frequency noise model in the linear region of lightly doped nanoscale double-gate metal-oxide-semiconductor field-effect transistors

Gerard Ghibaudo, J. Jomaah, K. A. Papathanasiou, 2010 .

MODELING AND SIMULATION OF COUPLING EFFECT ON LOW FREQUENCY NOISE IN ADVANCED SOI MOSFETS

Gerard Ghibaudo, Jalal Jomaah, Leily Zafari, 2008 .

Improved Analysis of Low Frequency Noise in Field‐Effect MOS Transistors

Gerard Ghibaudo, J. Brini, Francis Balestra, 1991 .

Analytical modelling for the current-voltage characteristics of undoped or lightly-doped symmetric double-gate MOSFETs

Gerard Ghibaudo, G. Pananakakis, Nadine Collaert, 2010 .

Retarding effect of surface base compensation on degradation of noise characteristics of BiCMOS BJTs

Gerard Ghibaudo, L. Vendrame, J. A. Chroboczek, 1997 .

Impact of channel orientation on ballistic current of nDGFETs with alternative channel materials

Gerard Ghibaudo, G. Pananakakis, Q. Rafhay, 2008 .

IMPACT OF GATE POLYSILICON INTERFACE ON CARRIER TRAPPING LOW FREQUENCY NOISE IN ADVANCED MOSFET'S

Gerard Ghibaudo, J. Jomaah, F. Balestra, 2006 .

Evaluation of HfAlO high-k materials for control dielectric applications in non-volatile memories

S. Deleonibus, Gerard Ghibaudo, G. Pananakakis, 2008 .

Compact Modeling of Nanoscale Trapezoidal FinFETs

Gerard Ghibaudo, Andreas Tsormpatzoglou, Matthias Bucher, 2014, IEEE Transactions on Electron Devices.

Current and temperature distribution impact on electromigration failure location in SWEAT structure

P. Mortini, Gerard Ghibaudo, C. Gounelle, 1994, Proceedings of 1994 IEEE International Conference on Microelectronic Test Structures.

Quasi-breakdown in ultrathin gate dielectrics

Gerard Ghibaudo, G. Ghibaudo, A. Halimaoui, 1997 .

ANALYSIS OF SPATIAL AND ENERGY SLOW TRAP PROFILE IN HfO2/SiO2 METAL-OXIDE-SILICON DEVICES BY LOW FREQUENCY NOISE MEASUREMENTS

Olivier Faynot, Gerard Ghibaudo, J. Jomaah, 2008 .

Transport mechanisms and charge trapping in thin dielectric/Si nano-crystals structures

G. Reimbold, Gerard Ghibaudo, Thierry Baron, 2001 .

Transport process in thin SiO2 films with an embedded 2-D array of Si nanocrystals

G. Reimbold, Gerard Ghibaudo, Thierry Baron, 2000 .

Low temperature characterization of silicon CMOS devices

Gerard Ghibaudo, Francis Balestra, F. Balestra, 1995, Proceedings of International Conference on Microelectronics.

Generalised method for extraction of MOSFET source-drain series resistance against temperature

Gerard Ghibaudo, Francis Balestra, G. Ghibaudo, 1993 .

Effect of rapid thermal annealing on the electrical properties of GaAs Schottky diodes embedded with self-assembled InAs quantum dots.

Gerard Ghibaudo, Jungil Lee, Jin Dong Song, 2008, Journal of nanoscience and nanotechnology.

Origin of large‐amplitude random telegraph signal in silicon bipolar junction transistors after hot carrier degradation

Dionyz Pogany, Gerard Ghibaudo, Alain Chantre, 1996 .

Quasi-breakdown in ultra-thin SiO/sub 2/ films: occurrence characterization and reliability assessment methodology

Gerard Ghibaudo, Emmanuel Vincent, Sylvie Bruyere, 2000, 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059).

Improved method for the oxide thickness extraction in MOS structures with ultrathin gate dielectrics

B. DeSalvo, Gerard Ghibaudo, Emmanuel Vincent, 2000 .

Characterization of Low-Pressure Chemical Vapor Deposited Polycrystalline Silicon Thin-Film Transistors by Low-Frequency Noise Measurements

Jean Brini, Gerard Ghibaudo, Charalabos A. Dimitriadis, 1998 .

On the understanding of electron and hole mobility models from room to liquid helium temperatures

Gerard Ghibaudo, Francis Balestra, G. Ghibaudo, 1994 .

Drain and Gate Current Low Frequency Noise in Biaxially Strained Siliconn-MOSFETs with Ultrathin Gate Oxides

Gerard Ghibaudo, T. Boutchacha, T. Contaret, 2006 .

A general bulk-limited transport analysis of a 10 nm-thick oxide stress-induced leakage current

G. Reimbold, Gerard Ghibaudo, G. Pananakakis, 2000 .

Breakdown mechanisms in ultra-thin Oxides: impact of carrier energy and current through substrate hot carrier stress study

Gerard Ghibaudo, G. Ribes, M. Denais, 2004 .

Low-temperature mobility behaviour in submicron MOSFETs and related determination of channel length and series resistance

Sorin Cristoloveanu, Gerard Ghibaudo, G. Ghibaudo, 1986 .

Low Frequency Noise in Multi-Gate SOI CMOS Devices

Gerard Ghibaudo, J. Jomaah, Leily Zafari, 2007 .

A time domain analysis of the charge pumping current

Gerard Ghibaudo, Nelson S. Saks, 1988 .

Impact of gate tunneling leakage on the operation of NMOS transistors with ultra-thin gate oxides

G. Guegan, Gerard Ghibaudo, G. Pananakakis, 2001 .

Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices

Gerard Ghibaudo, G. Pananakakis, Thierry Baron, 2001 .

Differential magnetoresistance technique for mobility extraction in ultra-short channel FDSOI transistors

Claire Fenouillet-Beranger, Sorin Cristoloveanu, Gerard Ghibaudo, 2006 .

A physical compact model for direct tunneling from NMOS inversion layers

Alan Mathewson, Gerard Ghibaudo, G. Pananakakis, 2001 .

Analytical models of subthreshold swing and threshold voltage for thin- and ultra-thin-film SOI MOSFETs

Gerard Ghibaudo, J. Brini, Francis Balestra, 1990 .

Accelerated wear-out of ultra-thin gate oxides after irradiation

Alessandro Paccagnella, Gerard Ghibaudo, Gabriella Ghidini, 2003 .

In depth characterization of electron transport in 14 nm FD-SOI CMOS devices

Gerard Ghibaudo, Gyu-Tae Kim, Emmanuel Josse, 2015 .

EKV3 compact modeling of MOS transistors from a 0.18 μm CMOS technology for mixed analog–digital circuit design at low temperature

Gerard Ghibaudo, Matthias Bucher, R. Fascio, 2009 .

Temperature dependence of charge build-up mechanisms and breakdown phenomena in thin oxides under Fowler-Nordheim injection

Constantin Papadas, Gerard Ghibaudo, Emmanuel Vincent, 1997 .

Piezoresistance effect of strained and unstrained fully-depleted silicon-on-insulator MOSFETs integrating a HfO2/TiN gate stack

Gerard Ghibaudo, M. Casse, Mireille Mouis, 2009 .

A New Technique to Extract the Source/Drain Series Resistance of MOSFETs

Gerard Ghibaudo, Antoine Cros, Dominique Fleury, 2009, IEEE Electron Device Letters.

A study of flicker noise in MOS transistors operated at room and liquid helium temperatures

Gerard Ghibaudo, I. M. Hafez, Francis Balestra, 1990 .

In Situ Comparison of Si/High- $\kappa$ and $\hbox{Si}/ \hbox{SiO}_{2}$ Channel Properties in SOI MOSFETs

Claire Fenouillet-Beranger, Thomas Skotnicki, Sorin Cristoloveanu, 2009 .

Evidence for defect-generation-driven wear-out of breakdown conduction path in ultra thin oxides

Gerard Ghibaudo, G. Pananakakis, G. Ribes, 2002, IEEE International Integrated Reliability Workshop Final Report, 2002..

Brief review of the MOS device physics for low temperature electronics

Gerard Ghibaudo, Francis Balestra, G. Ghibaudo, 1994 .

Revisited parameter extraction methodology for electrical characterization of junctionless transistors

Sylvain Barraud, Gerard Ghibaudo, Gyu-Tae Kim, 2013 .

Investigation of stress induced leakage current in CMOS structures with ultra-thin gate dielectrics

Gerard Ghibaudo, C. Jahan, K. Barla, 1997 .

Measurement and modeling of the annealing kinetics of stress induced leakage current in ultra-thin oxides

Jean Brini, Gerard Ghibaudo, G. Pananakakis, 1999 .

Analysis of the stress-induced leakage current and related trap distribution

Gerard Ghibaudo, G. Pananakakis, P. Riess, 1999 .

Generalized mobility law for drain current modeling in Si MOS transistors from liquid helium to room temperatures

Gerard Ghibaudo, F. Balestra, G. Ghibaudo, 1993 .

Peculiar aspects of nanocrystal memory cells: data and extrapolations

Gerard Ghibaudo, Salvatore Lombardo, Isodiana Crupi, 2003 .

A Combined Ab Initio and Experimental Study on the Nature of Conductive Filaments in ${\rm Pt}/{\rm Hf}{\rm O}_{2}/{\rm Pt}$ Resistive Random Access Memory

Gerard Ghibaudo, Elisa Vianello, Yoshio Nishi, 2014, IEEE Transactions on Electron Devices.

Analytical study of the contribution of fast and slow oxide traps to the charge pumping current in MOS structures

Gerard Ghibaudo, D. Bauza, G. Ghibaudo, 1996 .

Modeling the Dynamic Variability Induced by Charged Traps in a Bilayer Gate Oxide

Gilles Reimbold, Gerard Ghibaudo, Emmanuel Vincent, 2015, IEEE Transactions on Electron Devices.

Ionizing radiation induced leakage current on ultra-thin gate oxides

Alessandro Paccagnella, Gerard Ghibaudo, G. Pananakakis, 1997 .

Extraction of interface state density profile from the maximums of the parallel conductance versus applied gate bias curves Gp(Va), using the conductance technique

Gerard Ghibaudo, G. Pananakakis, C. Papadas, 1992 .

Reversibility of charge trapping and SILC creation in thin oxides after stress/anneal cycling

Jean Brini, Gerard Ghibaudo, G. Pananakakis, 1998 .

Low frequency (1/f ) noise model for the base current in polysilicon emitter bipolar junction transistors

Gerard Ghibaudo, Alain Chantre, J. A. Chroboczek, 1996 .

Investigation of SiO2/HfO2 gate stacks for application to non-volatile memory devices

Simon Deleonibus, Gerard Ghibaudo, Giuseppe Nicotra, 2005 .

Low frequency noise in biaxially strained silicon n-MOSFETs with ultrathin gate oxides

Thomas Skotnicki, Gerard Ghibaudo, F. Bœuf, 2007 .

Low-Frequency Noise Sources in Advanced UTBB FD-SOI MOSFETs

Olivier Faynot, Gerard Ghibaudo, Thierry Poiroux, 2014, IEEE Transactions on Electron Devices.

Generation of hot carriers by secondary impact ionization in deep submicron devices: model and light emission characterization

G. Reimbold, Gerard Ghibaudo, D. Blachier, 2000, 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059).

Investigation of low field and high temperature SiO2 and ONO leakage currents using the floating gate technique

Gerard Ghibaudo, G. Pananakakis, Bernard Guillaumot, 1999 .

Effects of channel width variation on electrical characteristics of tri-gate Junctionless transistors

Sylvain Barraud, Gerard Ghibaudo, Gyu-Tae Kim, 2013 .

Study on C60 Doped PMMA for Organic Memory Devices

Gerard Ghibaudo, C. Licitra, Raluca Tiron, 2010 .

Comparison of the electrical and thermal stability of stress- or radiation-induced leakage current in thin oxides

Gerard Ghibaudo, G. Pananakakis, A. Paccagnella, 2000 .

New ratio method for effective channel length and threshold voltage extraction in MOS transistors

Gerard Ghibaudo, B. Cretu, T. Boutchacha, 2001 .

Modified transmission-line method for contact resistance extraction in organic field-effect transistors

Gerard Ghibaudo, Romain Coppard, Isabelle Chartier, 2010 .

Stress-induced leakage current in very thin dielectric layers: some limitations to reliability extrapolation modeling

Gerard Ghibaudo, Emmanuel Vincent, S. Bruyre, 1999 .

Low frequency noise characterization of 0.25 μm Si CMOS transistors

M. Haond, Gerard Ghibaudo, G. Guégan, 1997 .

Influence of quadratic mobility degradation factor on low frequency noise in MOS transistors

Jean Brini, Gerard Ghibaudo, P. Morfouli, 1998 .

Analysis of the kink effect in MOS transistors

Gerard Ghibaudo, I. M. Hafez, Francis Balestra, 1990 .

Fabrication and characterization of silicon nanowire p-i-n MOS gated diode for use as p-type tunnel FET

Gerard Ghibaudo, Thierry Baron, P. Periwal, 2015 .

A new technique to extract the gate bias dependent s/d series resistance of sub-100nm MOSFETs

Gerard Ghibaudo, Emmanuel Josse, Antoine Cros, 2009, 2009 International Symposium on VLSI Technology, Systems, and Applications.

Impact of a HTO/Al2O3 bi-layer blocking oxide in nitride-trap non-volatile memories

X. Garros, S. Deleonibus, Gerard Ghibaudo, 2009, ESSDERC 2009.

15nm-diameter 3D Stacked Nanowires with optional Independent Gates operation (?FET)

O. Faynot, Christian Arvet, S. Deleonibus, 2008 .

Refined Conformal Mapping Model for MOSFET Parasitic Capacitances Based on Elliptic Integrals

Frederic Boeuf, Gerard Ghibaudo, Gaspard Hiblot, 2015, IEEE Transactions on Electron Devices.

Scaling of high-κ/metal-gate TriGate SOI nanowire transistors down to 10 nm width

Stephane Monfray, Frederic Boeuf, M.-P. Samson, 2013 .

Revisited approach for the characterization of Gate Induced Drain Leakage

Maud Vinet, Gerard Ghibaudo, Perrine Batude, 2011, Ulis 2011 Ultimate Integration on Silicon.

Ultra-thin fully-depleted SOI MOSFETs: Special charge properties and coupling effects

Sorin Cristoloveanu, Gerard Ghibaudo, S. Eminente, 2007 .

On the threshold voltage shift after hot carrier injection in deep submicron n-channel MOSFETs: a quasi-uniform approach

Constantin Papadas, Gerard Ghibaudo, Nathalie Revil, 1995 .

Flicker noise in metal‐oxide‐semiconductor transistors from liquid helium to room temperature

Gerard Ghibaudo, I. M. Hafez, Francis Balestra, 1989 .

Analytical Modeling of Threshold Voltage and Interface Ideality Factor of Nanoscale Ultrathin Body and Buried Oxide SOI MOSFETs With Back Gate Control

Olivier Faynot, Gerard Ghibaudo, Francois Andrieu, 2014, IEEE Transactions on Electron Devices.

Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate silicon nanowire MOSFETs

G. Reimbold, Hiroshi Iwai, Gerard Ghibaudo, 2013 .

Analytical Compact Model for Quantization in Undoped Double-Gate Metal Oxide Semiconductor Field Effect Transistors and Its Impact on Quasi-Ballistic Current

Frederic Boeuf, Thomas Skotnicki, Gerard Ghibaudo, 2006 .

Analysis of the trapping characteristics of silicon dioxide after Fowler-Nordheim degradation

Gerard Ghibaudo, G. Pananakakis, C. Papadas, 1991 .

A new method for the experimental determination of the control gate and drain coupling ratios in FLOTOX EEPROM cells

Constantin Papadas, P. Mortini, Gerard Ghibaudo, 1993, ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures.

Low-frequency noise in junctionless multigate transistors

Jean-Pierre Colinge, Gerard Ghibaudo, Chi-Woo Lee, 2011 .

Adaptation of the pseudo-MOS transistor for the characterization of silicon-on-sapphire films

Sorin Cristoloveanu, Gerard Ghibaudo, Takashi Morishita, 2000 .

Emerging oxide degradation mechanisms: stress induced leakage current (SILC) and quasi-breakdown (QB)

B. DeSalvo, Gerard Ghibaudo, G. Pananakakis, 1999 .

Electric field and temperature dependence of the stress induced leakage current: Fowler–Nordheim or Schottky emission?

Gerard Ghibaudo, G. Pananakakis, Gabriella Ghidini, 1999 .

Time to breakdown and voltage to breakdown modeling for ultra-thin oxides (Tox<32/spl Aring/)

Gerard Ghibaudo, G. Pananakakis, David Roy, 2001, 2001 IEEE International Integrated Reliability Workshop. Final Report (Cat. No.01TH8580).

How small the contacts could be optimal for nanoscale organic transistors

Gerard Ghibaudo, Kazuhito Tsukagoshi, Yong Xu, 2013 .

Oxide reliability criterion for the evaluation of the endurance performance of electrically erasable programmable read only memories

P. Mortini, Gerard Ghibaudo, G. Pananakakis, 1992 .

Mobility enhancement by CESL strain in short-channel ultrathin SOI MOSFETs

Claire Fenouillet-Beranger, Thomas Skotnicki, Sorin Cristoloveanu, 2010 .

Electrically and radiation induced leakage currents in thin oxides

Alessandro Paccagnella, Gerard Ghibaudo, G. Pananakakis, 2000 .

Thorough characterization of deep-submicron surface and buried channel pMOSFETs

G. Guegan, Gerard Ghibaudo, B. Cretu, 2002 .

Modeling of the programming window distribution in multinanocrystals memories

Gerard Ghibaudo, G. Pananakakis, Thierry Baron, 2003 .

Improved methodology for the Characterization of Avt MOSFET matching parameter dispersion

Gerard Ghibaudo, K. Rochereau, A. Cathignol, 2006 .

Analytical modeling of the contact resistance in top gate/bottom contacts organic thin film transistors

Gerard Ghibaudo, Romain Coppard, Isabelle Chartier, 2011 .

Mobility analysis of surface roughness scattering in FinFET devices

Gerard Ghibaudo, Mireille Mouis, Thomas Chiarella, 2011 .

Low frequency noise characterization of 0.18μm Si CMOS transistors

Thomas Skotnicki, Gerard Ghibaudo, G. Guégan, 1997 .

Evidence for defect-generation-driven wear-out of breakdown conduction path in ultra thin oxides

Gerard Ghibaudo, G. Pananakakis, G. Ribes, 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..

Oscillatory behavior of the tunneling current in ultra thin gate dielectrics: Influence of various physical and technological parameters☆

Gerard Ghibaudo, K. Barla, G. Ghibaudo, 1997 .

Direct evaluation of low-field mobility and access resistance in pentacene field-effect transistors

Gerard Ghibaudo, Kazuhito Tsukagoshi, J. A. Chroboczek, 2010 .

Reliability of charge trapping memories with high-k control dielectrics (Invited Paper)

Gerard Ghibaudo, G. Pananakakis, P. Brianceau, 2008 .

Joule's law for organic transistors exploration: Case of contact resistance

Gerard Ghibaudo, Kazuhito Tsukagoshi, Yong Xu, 2013 .

A new method for the extraction of flat-band voltage and doping concentration in Tri-gate Junctionless Transistors

Sylvain Barraud, Gerard Ghibaudo, Gyu-Tae Kim, 2013 .

Automatic full quantum analysis of CV measurements for bulk and SOI devices

G. Reimbold, Gerard Ghibaudo, A. Toffoli, 2011 .

Generalized trapping kinetic model for the oxide degradation after Fowler–Nordheim uniform gate stress

Constantin Papadas, Gerard Ghibaudo, G. Pananakakis, 1997 .

Temperature dependence of gate induced drain leakage current in silicon CMOS devices

Gerard Ghibaudo, F. Balestra, G. Ghibaudo, 1994 .

Low-frequency noise behavior of junctionless transistors compared to inversion-mode transistors

Sylvain Barraud, Gerard Ghibaudo, Gyu-Tae Kim, 2013 .

Modeling of contuctance fluctuations in small area metal–oxide–semiconductor transistors

Jean Brini, Gerard Ghibaudo, O. Roux, 1991 .

“Y function” method applied to saturation regime: Apparent saturation mobility and saturation velocity extraction

Stephane Monfray, Jerome Mitard, Gerard Ghibaudo, 2013 .

New method for the extraction of MOSFET parameters

Gerard Ghibaudo, G. Ghibaudo, 1988 .

New approach for the extraction of gate voltage dependent series resistance and channel length reduction in CMOS transistors

Gerard Ghibaudo, Andre Juge, H. Brut, 1997, 1997 IEEE International Conference on Microelectronic Test Structures Proceedings.

Source/drain optimization of underlapped lightly doped nanoscale double-gate MOSFETs

Gerard Ghibaudo, G. Pananakakis, Nadine Collaert, 2010 .

MOSFET Compact Modeling Issues for Low Temperature (77 K – 200 K) Operation

Gerard Ghibaudo, R. Fascio, M. Cavelier, 2008 .

Low Frequency Noise in Multi-Gate SOI CMOS Devices

Gerard Ghibaudo, J. Jomaah, Leily Zafari, 2006 .

Effective work function modulation by sacrificial gate aluminum diffusion on HfON-based 14nm NMOS devices

G. Reimbold, Pierre Caubet, Gerard Ghibaudo, 2015 .

Flat-band voltage and low-field mobility analysis of junctionless transistors under low-temperature

Sylvain Barraud, Gerard Ghibaudo, Mireille Mouis, 2014 .

Electric field dependence of TDDB activation energy in ultrathin oxides

Constantin Papadas, Gerard Ghibaudo, Nathalie Revil, 1996 .

Modelling of the temperature and electric field dependence of substrate/gate current SILC with an elastic resonant trap assisted tunnelling mechanism

Gerard Ghibaudo, G. Pananakakis, G. Ghibaudo, 1999 .

A simple derivation of Reimbold's drain current spectrum formula for flicker noise in MOSFETs

Gerard Ghibaudo, G. Ghibaudo, 1987 .

Ballistic and pocket limitations of mobility in nanometer Si metal-oxide semiconductor field-effect transistors

Frederic Boeuf, Thomas Skotnicki, Gerard Ghibaudo, 2005 .

An analytical model of conductance and transconductance for enhanced-mode MOSFETs

Gerard Ghibaudo, G. Ghibaudo, 1986 .

Experimental and theoretical investigation of nonvolatile memory data-retention

G. Reimbold, Gerard Ghibaudo, G. Pananakakis, 1999 .

Challenges in Interface Trap Characterization of Deep Sub-Micron MOS Devices Using Charge Pumping Techniques

Gerard Ghibaudo, Pascal Masson, Jean-Luc Autran, 1999 .

On the correlation between SILC and hole fluence throughout the oxide

Gerard Ghibaudo, G. Pananakakis, A. Scarpa, 1999 .

MOSFET Degradation Studied by Low Frequency Noise, Charge Pumping, and Static I(U) Measurements

Gerard Ghibaudo, Francis Balestra, G. Ghibaudo, 1991 .

Low-temperature electrical characterization of junctionless transistors

Sylvain Barraud, Gerard Ghibaudo, Gyu-Tae Kim, 2013 .

Low frequency noise analysis in HfO2/SiO2 gate oxide fully depleted silicon on insulator transistors

O. Faynot, Gerard Ghibaudo, J. Jomaah, 2009 .

Low frequency noise in phase change materials

H.-S. Philip Wong, Gerard Ghibaudo, Mireille Mouis, 2011, 2011 21st International Conference on Noise and Fluctuations.

Simple and Efficient MASTAR Threshold Voltage and Subthreshold Slope Models for Double Gate Structures

Frederic Boeuf, Thomas Skotnicki, J. Lacord, 2011 .

Metal gate and high-k integration for advanced CMOS devices

Thomas Skotnicki, Sorin Cristoloveanu, Simon Deleonibus, 2003, 2003 8th International Symposium Plasma- and Process-Induced Damage..

Flicker noise in MOS transistors operated at room and liquid helium temperatures

Gerard Ghibaudo, I. M. Hafez, Francis Balestra, 1990 .

UNIFIED MODEL FOR BREAKDOWN IN THIN AND ULTRATHIN GATE OXIDES (12-5 NM)

Constantin Papadas, P. Mortini, Gerard Ghibaudo, 1999 .

Investigation of the charge pumping current in metal‐oxide‐semiconductor structures

Gerard Ghibaudo, Nelson S. Saks, 1989 .

Experimental characterization of the subthreshold leakage current in triple-gate FinFETs

Gerard Ghibaudo, Nadine Collaert, Mireille Mouis, 2009 .

Analytical Drain Current Compact Model in the Depletion Operation Region of Short-Channel Triple-Gate Junctionless Transistors

Sylvain Barraud, Gerard Ghibaudo, Andreas Tsormpatzoglou, 2017, IEEE Transactions on Electron Devices.

Impact of LDD structures on the operation of silicon MOSFETs at low temperature

M. Haond, Gerard Ghibaudo, I. M. Hafez, 1995 .

Drain-Current Flicker Noise Modeling in nMOSFETs From a 14-nm FDSOI Technology

Gerard Ghibaudo, Sebastien Haendler, Eleftherios G. Ioannidis, 2015, IEEE Transactions on Electron Devices.

Technology Oriented Analytical Models of MOSFETs in the Quasi Ballistic Regime

Luca Selmi, Gerard Ghibaudo, Pierpaolo Palestri, 2007 .

3D nanowire gate-all-around transistors: Specific integration and electrical features

O. Faynot, S. Deleonibus, Gerard Ghibaudo, 2008 .

Tuning the dipole at the High-κ/SiO2 interface in advanced metal gate stacks

G. Reimbold, Gerard Ghibaudo, Pascal Besson, 2009 .

ON NOISE SOURCES IN HOT ELECTRON-DEGRADED BIPOLAR JUNCTION TRANSISTORS

Gerard Ghibaudo, J. A. Chroboczek, P. Llinares, 1997 .

Semi-analytical modelling of short channel effects in Si double gate, tri-gate and gate all-around MOSFETs

Gerard Ghibaudo, G. Pananakakis, Raphael Clerc, 2008 .

Experimental investigation and numerical simulation of low‐frequency noise in thin film SOI MOSFETs

Gerard Ghibaudo, Jalal Jomaah, Francis Balestra, 1994 .

Physical model of threshold voltage in silicon MOS transistors including reverse short channel effect

Gerard Ghibaudo, H. Brut, A. Juge, 1995 .

Low temperature electrical characterization of metal‐nitrided oxide‐silicon field effect transistors

Gerard Ghibaudo, Francis Balestra, V. Thirion, 1993 .

A comprehensive study of magnetoresistance mobility in short channel transistors: Application to strained and unstrained silicon-on-insulator field-effect transistors

Gilles Reimbold, Gerard Ghibaudo, Francois Andrieu, 2009 .

Characterization of Interface Defects

Gerard Ghibaudo, Paul K. Hurley, Olof Engström, 2010 .

Impact of reactive ion etching using O/sub 2/+CHF/sub 3/ plasma on the endurance performance of FLOTOX EEPROM cells

Federico Pio, Gerard Ghibaudo, G. Pananakakis, 1993 .

Theory of direct tunneling current in metal–oxide–semiconductor structures

Gerard Ghibaudo, G. Pananakakis, Alessandro S. Spinelli, 2002 .

Method for extracting deep submicrometre MOSFET parameters

Sorin Cristoloveanu, Gerard Ghibaudo, H. Haddara, 1995 .

On the theory of carrier number fluctuations in MOS devices

Gerard Ghibaudo, G. Ghibaudo, 1989 .

DC and low frequency noise characterization of FinFET devices

Gerard Ghibaudo, Nadine Collaert, Mireille Mouis, 2009 .

DIMENSION SCALING OF 1/F NOISE IN THE BASE CURRENT OF QUASISELF-ALIGNED POLYSILICON EMITTER BIPOLAR JUNCTION TRANSISTORS

D. Celi, Gerard Ghibaudo, J. A. Chroboczek, 1997 .

Characterization and modeling of drain current local variability in 28 and 14 nm FDSOI nMOSFETs

Gerard Ghibaudo, Sebastien Haendler, Nicolas Planes, 2016 .

Characterization of effective mobility by split C(V) technique in N-MOSFETs with ultra-thin gate oxides

Gerard Ghibaudo, Thomas Ernst, Carlotta Guiducci, 2003 .

Backscattering coefficient and drift-diffusion mobility extraction in short channel MOS devices

Claire Fenouillet-Beranger, Gerard Ghibaudo, Ilias Pappas, 2009 .

Investigating doping effects on high-κ metal gate stack for effective work function engineering

G. Reimbold, Pierre Caubet, Gerard Ghibaudo, 2013 .

Strain-enhanced performance of Si-Nanowire FETs

Sylvain Barraud, Gilles Reimbold, Gerard Ghibaudo, 2013 .

Low Frequency Noise Analysis in Advanced CMOS Devices

Gerard Ghibaudo, Majida Fadlallah, Jalal Jomaah, 2011 .

Investigation of Forming, SET, and Data Retention of Conductive-Bridge Random-Access Memory for Stack Optimization

Fabien Clermidy, Gerard Ghibaudo, Luca Perniola, 2015, IEEE Transactions on Electron Devices.

Threshold voltage and subthreshold slope of the volume-inversion MOS transistor

Gerard Ghibaudo, J. Brini, Francis Balestra, 1991 .

High Threshold Voltage Matching Performance on Gate-All-Around MOSFET

Thomas Skotnicki, Gerard Ghibaudo, K. Rochereau, 2006 .

Stress induced leakage current in ultra-thin gate oxides after constant current stress

Alessandro Paccagnella, Gerard Ghibaudo, G. Pananakakis, 1997 .

Analysis of charge sensitivity and low frequency noise limitation in silicon nanowire sensors

Gerard Ghibaudo, Mireille Mouis, Jae Woo Lee, 2010 .

Random telegraph signal noise mechanisms in reverse base current of hot carrier-degraded submicron bipolar transistors: Effect of carrier trapping during stress on noise characteristics

Dionyz Pogany, Gerard Ghibaudo, J. A. Chroboczek, 2001 .