J. Knecht

发表

The effect of arsenic vapour species on electrical and optical properties of GaAs grown by molecular beam epitaxy

K. Ploog, H. Künzel, K. Wünstel, 1982 .

Effect of barrier configuration on excitonic recombination in Ga.47In.53As/Al.48In.52As multi quantum well structures

K. Ploog, J. Wagner, W. Stolz, 1986 .

Investigation of persistent photoconductivity in Si-dopedn-AlxGa1−xas grown by molecular beam epitaxy

K. Ploog, H. Künzel, A. Fischer, 1983 .

Simultaneous modulation of electron and hole conductivity in a new periodic GaAs doping multilayer structure

G. Döhler, K. Ploog, H. Künzel, 1981 .

LETTER TO THE EDITOR: Pressure dependence of electron concentration and mobility in GaAs:Si-effects of on-site and inter-site interactions within a system of DX centres

K. Ploog, K. Świątek, J. Kossut, 1990 .

Pitting corrosion of aluminum coated by ion beam assisted deposition of carbon with argon ions at different ion-to-atom arrival ratios

M. Kiuchi, K. Volz, W. Ensinger, 2002 .

Argon versus nitrogen ion beam assisted deposition of amorphous carbon and carbon–nitrogen films on aluminum for protection against aqueous corrosion

M. Kiuchi, K. Volz, W. Ensinger, 2003 .

Transient and persistent photoconductivity in n-AlxGa1-xAs and selectively doped n-AlxGa1-xAs/GaAs heterostructures

K. Ploog, E. Schubert, J. Knecht, 1985 .

Pressure studies of resonant DX centers: Thermal emission from metastable Si and S donors in GaAs

K. Ploog, T. Suski, R. Piotrzkowski, 1990 .