D. Volm

发表

2.2 eV Luminescence in GaN

H. Amano, I. Akasaki, B. Meyer, 1995 .

Photoluminescence excitation studies of the optical transitions in GaN

H. Amano, I. Akasaki, B. Meyer, 1996 .

Relaxation of interfacial stress and improved quality of heteroepitaxial 3C–SiC films on (100)Si deposited by organometallic chemical vapor deposition at 1200 °C

B. Meyer, S. Vepřek, D. Volm, 1997 .

Structural and optical analysis of epitaxial GaN on sapphire

M. Schienle, U. Strauss, H. Tews, 1997 .

Shallow donors in GaN—The binding energy and the electron effective mass

Theeradetch Detchprohm, Isamu Akasaki, A. Graber, 1995 .

Effects of microwave fields on recombination processes in 4H and 6H SiC

J. Bergman, E. Janzén, N. T. Son, 1997 .

Electron effective masses in 4H SiC

Bo Monemar, Bruno K. Meyer, Erik Janzén, 1995 .

GaN On 6H-SiC – Structural And Optical Properties

B. Meyer, C. Wetzel, K. Pressel, 1994 .

Optically detected cyclotron resonance investigations on 4H and 6H SiC : Band-structure and transport properties

E. Janzén, Weimin M. Chen, B. Meyer, 2000 .

Conductivity measurements on GaN grown by OMVPE and HVPE

H. Amano, K. Hiramatsu, I. Akasaki, 1995 .

GaN epitaxial layers grown on 6H‐SiC by the sublimation sandwich technique

K. Pressel, Christian Wetzel, Bruno K. Meyer, 1994 .

Optical investigation of deep defects in GaN epitaxial layers grown on 6H-SiC

B. Meyer, R. Heitz, C. Wetzel, 1996 .

High Quality Heteroepitaxial ß-SiC Deposited from Methyltrichlorosilane at 1200°C without any Buffer Layer

B. Meyer, S. Vepřek, J. Hofmann, 1995 .

Time Resolved Photoluminescence Spectroscopy on GaN Epitaxial Layers

J. Pankove, B. Meyer, R. Heitz, 1995 .

Free exciton emission in GaN.

Kovalev, Amano, Meyer, 1996, Physical review. B, Condensed matter.

Identification of a Cubic Phase in Epitaxial Layers of Predominantly Hexagonal GaN

M. Schienle, U. Strauss, H. Tews, 1996 .

Radiation Defects in SiC - Electron Irradiation With Different Energies

B. Meyer, P. Baranov, E. N. Mokhov, 1994 .

Magneto-optical investigation of the neutral donor bound exciton in GaN

H. Amano, I. Akasaki, B. Meyer, 1995 .