C. Shu

发表

Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition

M. C. Lee, Wei-Kuo Chen, Hung-Chun Lin, 1998 .

Optical and electrical investigations of isoelectronic In-doped GaN films

M. C. Lee, Wei-Kuo Chen, Hung-Chun Lin, 2000 .

Growth temperature effects on InxGa1−xN films studied by X-ray and photoluminescence

Wei-Kuo Chen, Yung–Chung Pan, M. Lee, 1998 .

Time-resolved photoluminescence study of isoelectronic In-doped GaN films grown by metalorganic vapor-phase epitaxy

M. C. Lee, Hsiang-Jen Huang, Wei-Kuo Chen, 2000 .

Raman and x-ray studies of InN films grown by metalorganic vapor phase epitaxy

Yung-Chung Pan, Chen-Ke Shu, Wei-Kuo Chen, 1998 .

Photoluminescence and photoluminescence excitation studies of as-grown and P-implanted GaN: On the nature of yellow luminescence

Hsiang-Jen Huang, C. Chuang, Wei-Kuo Chen, 2002 .

Isoelectronic As doping effects on the optical characteristics of GaN films grown by metalorganic chemical-vapor deposition

Hsiang-Jen Huang, Wei-Kuo Chen, Wei Lee, 2000 .

Influence of Sapphire Nitridation on Properties of Indium Nitride Prepared by Metalorganic Vapor Phase Epitaxy

Wei-Kuo Chen, M. Lee, C. Chiang, 1999 .

Metastable photoluminescence in heavily Mg-doped GaN grown by metalorganic chemical vapor phase epitaxy

Ming-Chih Lee, Wen-Hsiung Chen, Wen-Hsiung Lee, 2000, SPIE Photonics Taiwan.

Time-resolved photoluminescence study of isoelectronic In-doped GaN films grown by metalorganic vapor-phase epitaxy

Hsiang-Jen Huang, Wei-Kuo Chen, M. Lee, 2000 .

Growth temperature effects on InxGa1-xN films studied by X-ray and photoluminescence

Wei-Kuo Chen, Yung–Chung Pan, M. Lee, 1998 .