Y. Takeuchi

发表

A theoretical explanation for the red energy shift of a newly discovered, exclusively acceptor‐associated emission in GaAs

S. Shigetomi, Y. Makita, N. Ohnishi, 1987 .

Photoluminescence of Mg‐doped GaAs grown by molecular beam epitaxy using Mg3As2 as a Mg source: A comparison with Mg+ ion implantation

Y. Mitsuhashi, K. Kudo, Y. Makita, 1986 .

Selective optical compensation effect of two new near‐band‐edge emissions in simultaneously acceptor (Zn+) and donor (Se+) ion‐implanted GaAs

Y. Mitsuhashi, H. Tanoue, K. Kudo, 1986 .

Formation of a new deep emission in Si + , S + , Se + , and Te + ion-implanted GaAs

H. Tanoue, T. Kanayama, Y. Makita, 1986 .

Observation of new common emissions in GaAs produced by ion implantation of four acceptor impurities

K. Kudo, Y. Makita, T. Nomura, 1986 .

The Sound Velocity near the Pressure Induced Tricritical Point of TGSe

H. Yamashita, I. Tatsuzaki, Y. Takeuchi, 1981 .

Pressure-Induced Tricritical Nature in Triglycine Selenate

H. Yamashita, I. Tatsuzaki, Y. Takeuchi, 1980 .

Sound Velocity near the Tricritical Lines in TGSe-DTGSe System

Y. Takeuchi, 1984 .

The Tetracritical Point of TGSe-DTGSe System

I. Tatsuzaki, Y. Takeuchi, 1982 .

Two Tricritical Points in TGSe–DTGSe System

H. Yamashita, I. Tatsuzaki, Y. Takeuchi, 1981 .

Annihilation of thermal double donors in silicon

Y. Kamiura, Y. Yamashita, Y. Takeuchi, 2000 .

Photoluminescence of very dilutely C+ ion‐implanted GaAs

K. Kudo, Y. Makita, T. Nomura, 1985 .

Formation of radiative complex-centers by dual implantation of C+ and O+ ions into GaAs

K. Kudo, Y. Makita, T. Nomura, 1986 .

Photoluminescence of undoped, N+-implanted and C+-implanted AlAs grown by molecular beam epitaxy

Y. Mitsuhashi, K. Kudo, Y. Makita, 1986 .