M. Ishibashi

Novel Shallow Trench Isolation Process from Viewpoint of Total Strain Process Design for 45 nm Node Devices and Beyond

Y. Ohji, M. Inuishi, T. Kuroi, 2005 .

Layout-Independent Transistor with Stress-Controlled and Highly Manufacturable Shallow Trench Isolation Process

Y. Inoue, T. Yamashita, Y. Horiba, 2007 .

Radical oxidation of germanium for interface gate dielectric GeO2 formation in metal-insulator-semiconductor gate stack

Krishna C. Saraswat, Piero Pianetta, Masaharu Kobayashi, 2009 .

p-Channel Ge MOSFET by Selectively Heteroepitaxially Grown Ge on Si

Hyun-Yong Yu, M. Ishibashi, K. Saraswat, 2009, IEEE Electron Device Letters.

Characterization of Ta 2 O 5 Thin Films With Small Current Leakage for High Density DRAMS

Y. Ohji, R. Furukawa, K. Ogata, 1999 .