Shun Sadakuni

发表

Bias-Assisted Photochemical Planarization of GaN(0001) Substrate with Damage Layer

Y. Sano, K. Yamauchi, S. Matsuyama, 2013 .

Photo-electrochemical etching of free-standing GaN wafer surfaces grown by hydride vapor phase epitaxy

J. Murata, Shun Sadakuni, 2015 .

Planarization of GaN(0001) Surface by Photo-Electrochemical Method with Solid Acidic or Basic Catalyst

T. Okamoto, Y. Sano, H. Mimura, 2009 .

Formation of wide and atomically flat graphene layers on ultraprecision-figured 4H-SiC(0001) surfaces

T. Okamoto, Y. Sano, K. Yamauchi, 2011 .

Improvement of Removal Rate in Abrasive-Free Planarization of 4H-SiC Substrates Using Catalytic Platinum and Hydrofluoric Acid

T. Okamoto, Y. Sano, K. Yamauchi, 2012 .

Structural and chemical characteristics of atomically smooth GaN surfaces prepared by abrasive-free polishing with Pt catalyst

Kazuto Yamauchi, Kenta Arima, Keita Yagi, 2012 .

Enhancement of photoluminescence efficiency from GaN(0001) by surface treatments

Y. Sano, K. Yamauchi, A. Hattori, 2014 .

Efficient wet etching of GaN (0001) substrate with subsurface damage layer.

T. Okamoto, Y. Sano, K. Yamauchi, 2011, Journal of Nanoscience and Nanotechnology.

Surface Observation of 4H-SiC (0001) Planarized by Catalyst-Referred Etching

T. Okamoto, Y. Sano, K. Yamauchi, 2012 .

Abrasive-Free Planarization of 3-Inch 4H-SiC Substrate Using Catalyst-Referred Etching

T. Okamoto, Y. Sano, K. Yamauchi, 2011 .

TEM Observation of 8 Deg Off-Axis 4H-SiC (0001) Surfaces Planarized by Catalyst-Referred Etching

T. Okamoto, Y. Sano, K. Yamauchi, 2011 .

Study of Terminated Species on 4H-SiC (0001) Surfaces Planarized by Catalyst-Referred Etching

T. Okamoto, Y. Sano, K. Yamauchi, 2013 .

High-Resolution TEM Observation of 4H-SiC (0001) Surface Planarized by Catalyst-Referred Etching

Kazuto Yamauchi, Kenta Arima, Ryusuke Sagawa, 2012 .

Reduction of Surface Roughness of 4H-SiC by Catalyst-Referred Etching

T. Fuyuki, T. Okamoto, T. Hatayama, 2010 .

Influence of the UV Light Intensity on the Photoelectrochemical Planarization Technique for Gallium Nitride

T. Okamoto, Y. Sano, K. Yamauchi, 2010 .

4H-SiC Planarization Using Catalyst-Referred Etching with Pure Water

Y. Sano, K. Yamauchi, A. Isohashi, 2014 .

Dependence of process characteristics on atomic-step density in catalyst-referred etching of 4H-SiC(0001) surface.

Kazuto Yamauchi, Kenta Arima, Keita Yagi, 2011, Journal of nanoscience and nanotechnology.