P. Maloney

Bulk InAsxSb1-x nBn photodetectors with greater than 5μm cutoff on GaSb

Sumith V. Bandara, Meimei Z. Tidrow, Dmitri Lubyshev, 2016 .

Low operating bias InAs/GaSb strain layer superlattice LWIR detector

Eric C. Nallon, M. Tidrow, N. Baril, 2015 .

Emissivity of microstructured silicon.

V. King, E. Mazur, M. Winkler, 2010, Applied optics.

Optimization of thickness and doping of heterojunction unipolar barrier layer for dark current suppression in long wavelength strain layer superlattice infrared detectors

Sumith V. Bandara, Meimei Z. Tidrow, Curtis Billman, 2013 .

Heterojunction-based GaSb/InAs strained-layer superlattice long wavelength infrared detectors

Eric C. Nallon, M. Tidrow, N. Baril, 2013 .

Doping dependence of minority carrier lifetime in long-wave Sb-based type II superlattice infrared detector materials

Sumith V. Bandara, Meimei Z. Tidrow, Patrick Maloney, 2011 .