R. Oligschlaeger

Investigation and reduction of RF loss induced by Al diffusion at the AlN/Si(111) interface in GaN-based HEMT buffer stacks

A. Vescan, M. Heuken, R. Negra, 2021, Semiconductor Science and Technology.

Conformal MOVPE of (Al)GaAs on silicon using alternative chlorine-containing precursors

K. Heime, B. Gérard, J. Jiménez, 2000 .

Resistive switching of rose bengal devices: A molecular effect?

R. Waser, M. Weides, A. Besmehn, 2006 .

Resistive switching and data reliability of epitaxial (Ba,Sr)TiO3 thin films

Rainer Waser, Regina Dittmann, Silvia Karthäuser, 2006 .