A. V. Felde

发表

Electronic Structure of Conducting Polymers by Electron Energy-Loss Spectroscopy

J. Fink, N. Nücker, B. Scheerer, 1996 .

Oxidation of GaAs(110) with NO2: A molecular beam study

C. C. Bahr, S. Buratto, M. Cardillo, 1995 .

Electronic Structure of Undoped and Doped Polyphenylenevinylene

S. Roth, J. Fink, N. Nücker, 1987 .

Carrier excitation by atomic collision on GaAs(110)

P. Weiss, K. Kern, P. Trevor, 1990 .

Pressure of Neon, Argon, and Xenon Bubbles in Aluminum

G. Linker, J. Pflüger, J. Fink, 1984 .

Electronic Structure of Doped Highly Oriented Polyacetylene

G. Leising, J. Fink, N. Nücker, 1987 .

Enhanced room temperature oxidation of GaAs(100) using NO2

C. C. Bahr, G. Meigs, M. Cardillo, 1992 .

Carrier excitation by hyperthermal Xe collisions at a Si(111):As surface

C. C. Bahr, J. Hsu, M. Cardillo, 1992 .

Surface effects on carrier dynamics: photoconductivity studies on Si (111)

C. C. Bahr, J. Hsu, S. Downey, 1992 .

Si(111)(7×7) dangling bond contribution to surface recombination

C. C. Bahr, J. Hsu, S. Downey, 1992 .