V. Liberman

发表

The controlled growth of high-quality mercury cadmium telluride

Sergey A. Dvoretsky, N. N. Mikhailov, Yu. G. Sidorov, 1995 .

Characterization of low energy ion-induced damage using the multiple quantum well probe technique with an intervening superlattice

R. Martin, P. Petroff, E. Hu, 1993 .

Reaction of HCl with the GaAs(100) surface

R. Martin, A. Ludviksson, Mingde Xu, 1994 .

Molecular beam epitaxy of high quality Hg1 − xCdxTe films with control of the composition distribution

Sergey A. Dvoretsky, N. N. Mikhailov, Yu. G. Sidorov, 1996 .

The growth of high-quality MCT films by MBE using in-situ ellipsometry

V. G. Remesnik, S. Dvoretsky, K. K. Svitashev, 1994 .

Sulfur layer formation on GaAs(100) by thermal and photochemical H2S dissociation

R. Martin, M. Nooney, V. Liberman, 1995 .

Peculiarities of the MBE growth physics and technology of narrow-gap II-VI compounds

Sergey A. Dvoretsky, N. N. Mikhailov, M. Yakushev, 1997 .

Growth of and Defect Formation in Cd x Hg 1- x Te Films During Molecular-Beam Epitaxy

I. Sabinina, M. Yakushev, N. Mikhailov, 1996 .