C. Huang

Stress effects on self-aligned silicon nanowires junctionless field effect transistors

C. Huang, S. Lee, 2011, 2011 11th IEEE International Conference on Nanotechnology.

Simulation of hot electron induced degradation in silicon bipolar transistors

T. Grotjohn, C. Huang, C.-C.W. Yu, 1992, Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting.

Forward-bias stress effects on BJT gain and noise characteristics

C. J. Sun, Timothy A. Grotjohn, C.-J. Huang, 1994 .

Temperature dependence of hot-electron degradation in bipolar transistors

Timothy A. Grotjohn, C.-J. Huang, Donnie K. Reinhard, 1993 .

Hot-electron-induced degradation and post-stress recovery of bipolar transistor gain and noise characteristics

Timothy A. Grotjohn, C.-J. Huang, Donnie K. Reinhard, 1992 .

Temperature dependence and post-stress recovery of hot electron degradation effects in bipolar transistors

Clare C. Yu, C. Huang, C. J. Sun, 1991, Proceedings of the 1991 Bipolar Circuits and Technology Meeting.