E. Huang

Experimental confirmation of electron fluence driven, Cu catalyzed interface breakdown model for low-k TDDB

D. Edelstein, J. Gambino, M. Shinosky, 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).

Post porosity plasma protection integration at 48 nm pitch

T. Standaert, D. Edelstein, A. Grill, 2016, 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).

Optimizing ULK film properties to enable BEOL integration with TDDB reliability

E. T. Ryan, S. Gates, A. Grill, 2015, 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM).

Comprehensive investigations of CoWP metal-cap impacts on low-k TDDB for 32nm technology application

L. Nicholson, F. Chen, M. Shinosky, 2010, 2010 IEEE International Reliability Physics Symposium.

Experimental study of nanoscale Co damascene BEOL interconnect structures

D. Edelstein, J. Kelly, B. Peethala, 2016, 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).

Reliable airgap BEOL technology in advanced 48 nm pitch copper/ULK interconnects for substantial power and performance benefits

S. Gates, D. Edelstein, T. Hook, 2017, 2017 IEEE International Interconnect Technology Conference (IITC).