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SiC rapid thermal carbonization of the (111)Si semiconductor‐on‐insulator structure and subsequent metalorganic chemical vapor deposition of GaN

Andrew J. Steckl, R. A. Stall, A. Steckl, 1996 .

Characterization of 3C–SiC crystals grown by thermal decomposition of methyltrichlorosilane

A. Steckl, H. Jackson, S. Tlali, 1996 .

Nanomed Nanotechnol 2017, 2(1): 000111

C. Tran, Tuyen Ktt, 2018 .

Growth and characterization of GaN thin films on SiC SOI substrates

A. Steckl, R. Stall, C. Tran, 1997 .