Kwang Chul Kim

发表

Metal-organic chemical vapor deposition growth of GaN thin film on 3C-SiC/Si(111) substrate using various buffer layers.

E. Suh, K. Nahm, J. Kang, 2001 .

Mechanistic Study and Characterization of 3C-SiC(100) Grown on Si(100)

Youn-Sik Lee, K. Nahm, Chan il Park, 2001 .

Effect of surface preparation on Ni Ohmic contact to 3C-SiC

M. Capano, K. Nahm, Jaeha Noh, 2002 .

Kinetic study of 3C-SiC growth on Si by pyrolyzing tetramethysilane in low pressure radio frequency-induction heated chemical vapor deposition reactor

Hun-Soo Byun, K. Nahm, Y. Hahn, 2000 .

Effects of Experimental Parameters on Void Formation in the Growth of 3C‐SiC Thin Film on Si Substrate

E. Suh, Byung-Teak Lee, K. Nahm, 1998 .

Formation mechanism of interfacial voids in the growth of SiC films on Si substrates

K. Nahm, Y. Seo, J. Roh, 2001 .

Growth and Characterization of SiC / SiN x / Si Structures

K. Nahm, K. Lim, Kwang Chul Kim, 2001 .

The surface modification of Si(111) substrates with SiNx for the growth of high quality β-SiC epilayers

E. Suh, K. Nahm, Kwang Chul Kim, 1999 .

Growth Chemistry and Interface Characterization of Single Crystal SiC on Modified Si Surface

K. Nahm, Y. Seo, K. Lim, 2001 .