L. Spasevski

Scanning electron microscopy as a flexible technique for investigating the properties of UV-emitting nitride semiconductor thin films

M. Kneissl, M. Weyers, Tao Wang, 2019, Photonics Research.

Quantification of Trace-Level Silicon Doping in AlxGa1–xN Films Using Wavelength-Dispersive X-Ray Microanalysis

M. Kneissl, P. Parbrook, R. Martin, 2021, Microscopy and Microanalysis.

Excitons in PL Spectra of Cu(In,Ga)Se2 Single Crystals

M. Yakushev, R. Martin, P. Edwards, 2019, Physics of the Solid State.

A systematic comparison of polar and semipolar Si-doped AlGaN alloys with high AlN content

D. V. Dinh, P. Parbrook, R. Martin, 2020, Journal of Physics D: Applied Physics.

GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices

D. Anjum, N. Wei, I. Roqan, 2018, Applied Physics Letters.

Indium incorporation in quaternary InxAlyGa1−x−yN for UVB-LEDs

M. Kneissl, R. Martin, G. Kusch, 2019, Japanese Journal of Applied Physics.

Influence of InN and AlN concentration on the compositional inhomogeneity and formation of InN-rich regions in InxAlyGa1−x−yN

M. Kneissl, R. Martin, P. Edwards, 2019, Japanese Journal of Applied Physics.