F. Lin

发表

Current transport mechanism of Au∕Ni∕GaN Schottky diodes at high temperatures

Z. J. Yang, Yangyuan Wang, Sen Huang, 2007 .

Boundary-enhanced momentum relaxation of longitudinal optical phonons in GaN

Xiaodong Wang, L. Lu, Z. Feng, 2012 .

Current-controlled negative differential resistance effect induced by Gunn-type instability in n-type GaN epilayers

C. Wen, L. Lu, Z. Feng, 2010 .

Temperature dependence of the specific resistance in Ti/Al/Ni/Au Ohmic contacts on (NH4)2Sx treated n-type GaN

Shaoyun Huang, Z. Qin, G. Y. Zhang, 2009 .

Ni diffusion and its influence on electrical properties of AlxGa1−xN∕GaN heterostructures

Z. J. Yang, Yangyuan Wang, Sen Huang, 2008 .

High conductive gate leakage current channels induced by In segregation around screw- and mixed-type threading dislocations in lattice-matched InxAl1−xN/GaN heterostructures

C. C. Huang, Xiaodong Wang, K. Wei, 2010 .

Study of the leakage current mechanism in Schottky contacts to Al0.25Ga0.75N/GaN heterostructures with AlN interlayers

L. Sang, Sen Huang, Z. Qin, 2009 .